Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization
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Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization Barry D. van Dijk, Paul Ch. Van der Wilt, G. J. Bertens, Lis.K. Nanver, and Ryoichi Ishihara Delft University of Technology, DIMES, Feldmannweg17, 2628 CT DELFT, The Netherlands [email protected]
ABSTRACT Thin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.
INTRODUCTION Single-crystal TFTs can be fabricated by positioning the channel of a TFT inside a large grain of excimer laser crystallized silicon. TFTs fabricated inside a single grain have been reported [1] to have high mobility and low off-current (470 cm2/Vs and
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