The reduction of thermal conductivity in Cd and Sn co-doped Cu 3 SbSe 4 -based composites with a secondary-phase CdSe
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The reduction of thermal conductivity in Cd and Sn co-doped Cu3SbSe4-based composites with a secondary-phase CdSe Shuping Deng1, Xianyan Jiang1, Lili Chen1, Ziye Zhang1, Ning Qi1, Yichu Wu1,*, Zhiquan Chen1,* , and Xinfeng Tang2 1 2
School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University, Wuhan 430072, China State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
Received: 31 July 2020
ABSTRACT
Accepted: 17 November 2020
In this paper, we reported the enhanced thermoelectric properties of Cd and Sn dual-doped Cu3SbSe4-based material prepared by the vacuum melting combined with spark plasma sintering process. X-ray photoelectron spectroscopy studies revealed the presence of Cu?, Cd2?, Sb5?, Sn4? and Se2- states of Cu, Cd, Sb, Sn and Se, respectively. All samples exhibited p-type conduction with carrier concentrations varying from 0.54 9 1018 to 46.42 9 1018 cm-3, while carrier mobility changes from 18.2 to 46.6 cm2 V-1 s-1 at room temperature. Cd doping at Cu sites in the Cu3SbSe4 can reduce the lattice thermal conductivity, while Sn doping at Sb sites is effective to adjust the carrier concentration. The further reduction in thermal conductivity is observed in Cd-Sn co-doped samples resulting from an accumulated effect combining point defects and the secondary-phase CdSe. Consequently, the maximum dimensionless figure of merit (ZT) value reaches 0.66 at 623 K for the Cu2.75Cd0.25Sb0.94Sn0.06Se4 sample, which is 190% larger than that of the intrinsic sample (ZT of 0.35). The findings provide an alternative strategy of boosting the carrier and phonon transports of the Cu3SbSe4, which is also a meaningful guidance to achieve high performance in other copper-based chalcogenides.
Published online: 25 November 2020
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Introduction In light of burgeoning demand for today’s energy and environmental challenge, thermoelectric (TE) materials with a potential to enable direct conversion
between heat and electricity are expected to play a key role in power generation application [1]. The efficiency of TE materials is consequently governed by the dimensionless figure of merit 2 (ZT):ZT ¼ S rT=j , where S is the Seebeck coefficient,
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https://doi.org/10.1007/s10853-020-05586-3
4728 r is the electrical conductivity, T is the absolute temperature, and k refers to the thermal conductivity which contains contributions from the electronic Kele and lattice part conductivity klat (j ¼ jlat þ jele ), respectively [2, 3]. Because of a strong correlation among S, r and K, research efforts in boosting the TE performance should decouple among the above parameters. To obtain a high power factor PF (PF ¼ S2 r ), some strategies with the resonant states [4, 5], band convergence [6, 7], fermi-level pinning [8] and multiple bands [9] have been exp
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