Transmission Line Method Analysis on the Electrical Properties of Bi-Layer Channel Oxide Thin Film Transistors with Oxid
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Transactions on Electrical and Electronic Materials https://doi.org/10.1007/s42341-020-00232-w
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Transmission Line Method Analysis on the Electrical Properties of Bi‑Layer Channel Oxide Thin Film Transistors with Oxide‑Metal‑Oxide Electrodes So Yeon Park1 · Sang Yeol Lee1 Received: 14 April 2020 / Revised: 21 July 2020 / Accepted: 27 July 2020 © The Korean Institute of Electrical and Electronic Material Engineers 2020
Abstract Amorphous oxide thin film transistors (TFTs) is designed with bi-layer channel structure of SiInZnO/SiZnSnO (SIZO/ SZTO). Bi-layer TFTs has excellent characteristics, such as high mobility, excellent on/off ratio, and low sub-threshold swing compared with the single layer TFTs. In the bi-layer structure, electrical properties were improved by the bottom layer of SIZO film with high carrier concentration and the SZTO film of the top layer could improve stability. Source and drain (S/D) electrodes adopt oxide-metal-oxide (OMO) of SiInZnO/Ag/SiInZnO (SIZO/Ag/SIZO) structure to manufacture high performance TFTs. The sheet resistance ( Rsh ) and contact resistance ( Rc ) of single layer TFTs and bi-layer TFTs were obtained using transmission line method (TLM), and the bi-layer TFTs exhibited low Rsh and Rc resistances with OMO electrodes. The low Rsh was found to be advantageous to lowering the Rc at the S/D electrodes when the OMO structure was applied to a TFTs as revealed in the outstanding device performances. OMO electrodes provide potential possibility to improve oxide TFT with excellent characteristics. Keywords TLM · Amorphous oxide · Thin film · Transparent · OMO
1 Introduction The amorphous oxide semiconductor (AOS) TFTs have superior electrical properties compared with those of conventional a-Si TFT. AOSs have many advantages, such as excellent uniformity over a wide area, deposition at low temperature process and optically transparent in the visible range due to a wide band gap of 3.0 eV. Also, they show excellent electrical properties, such as high field effect mobility, low subthreshold swing, and excellent on/ off ratio [1]. Therefore, it has been extensively researched as one of the most promising active channel materials for TFTs, and can be used to produce next-generation displays, such as flexible display, active matrix liquid crystal display (AMLCD), active matrix organic light emitting diode (AMOLED) and transparent electrodes [2]. In particular, InZnO (IZO) has attracted much attention for the * Sang Yeol Lee [email protected] 1
Department of Semiconductor Engineering, Cheongju University, Cheongju, Chungbuk 360‑764, South Korea
fabrication of high performance electronic devices. Because indium forms carrier transport path in oxide semiconductors, it makes free electron migration easier. In other words, indium plays a very important role in improving mobility by providing many free electrons to the active channel [3]. The In2 O3 tends to generate many oxygen vacancies ( Vo ), but excessive Vo can result in degraded stability owing to the generated defect
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