Triple Gate SOI MOSFET
Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) had been one of the best devices designed for integrated circuits over the decades. Due to continuous downscaling of the transistor the short-channel effects comes into play and further scaling be
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Abstract Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) had been one of the best devices designed for integrated circuits over the decades. Due to continuous downscaling of the transistor the short-channel effects comes into play and further scaling becomes difficult. So, Multi-gate devices have been proposed so as to reduce these effects. Analytical modeling of Tri-gate MOSFET by solving Poisson’s equation and necessary boundary condition is proposed in this paper. Surface potential for Tri-gate SOI MOSFET has been obtained and the effects of the device parameters like oxide thickness, different oxide material, channel length, gate voltage and drain voltage are plotted using MATLAB simulator. Keywords Silicon on insulator
Short-channel effects Tri-gate MOSFET
1 Introduction MOSFET have delivered high performance for the reduction of cost in chips used for communication system and high-end processors [1, 2]. Scaling down [3, 4] of the MOSFET is reaching its physical limits due to short-channel effects (SCEs) [5] such as hot carrier effects [6, 7], gate oxide tunneling, subthreshold swing [8, 9], gate-induced drain lowering, drain-induced barrier lowering [10], voltage threshold A. Agarwal (&) P.C. Pradhan Department of Electronic and Communication Engineering, Sikkim Manipal Institute of Technology, Majitar, Sikkim, India e-mail: [email protected] P.C. Pradhan e-mail: [email protected] B.P. Swain Centre for Material Science and Nano Technology, Sikkim Manipal Institute of Technology, Majitar, Sikkim, India e-mail: [email protected] © Springer Nature Singapore Pte Ltd. 2018 A. Kalam et al. (eds.), Advances in Electronics, Communication and Computing, Lecture Notes in Electrical Engineering 443, https://doi.org/10.1007/978-981-10-4765-7_12
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shift [11]. Different structures previously have been implemented like double gate MOSFET so as to reduce short-channel effects. But this device is not able to reduce these effects. In triple gate MOSFET [12, 13] there are three gates and this channel is controlled by three sides so as to better control the electrostatic potential in the channel and reduce the short-channel effects.
2 Triple Gate SOI MOSFET Figure 1 shows the schematic of Tri-gate MOSFET [14, 15] and from the structure we can see that there are three gates along the sides of the channels. Figures 2 and 3 show the front gate and two side gate of the transistor. Due to presence of more than one gate there is better electrostatic potential control over the channel and performs better transportation of the electron through the channel [16, 17]. Due to this better control the short-channel effects such as gate oxide tunneling, hot carrier effects, drain induced barrier lowering, gate induced drain lowering, voltage threshold shift, subthreshold swing can be minimized.
2.1
Analytical Modeling
In semiconductor body the potential distribution [18, 19] Wðx; yÞ is given by Poisson’s equation as d2 Wðx; yÞ d2 Wðx; yÞ qNA þ ¼ dx2 dy2 si
Fig. 1 Sch
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