Variation-Aware Advanced CMOS Devices and SRAM
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and wo
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Changhwan Shin
Variation-Aware Advanced CMOS Devices and SRAM
Springer Series in Advanced Microelectronics Volume 56
Series editors Kukjin Chun, Seoul, Korea, Republic of (South Korea) Kiyoo Itoh, Tokyo, Japan Thomas H. Lee, Stanford, CA, USA Rino Micheloni, Vimercate (MB), Italy Takayasu Sakurai, Tokyo, Japan Willy M.C. Sansen, Leuven, Belgium Doris Schmitt-Landsiedel, München, Germany
The Springer Series in Advanced Microelectronics provides systematic information on all the topics relevant for the design, processing, and manufacturing of microelectronic devices. The books, each prepared by leading researchers or engineers in their fields, cover the basic and advanced aspects of topics such as wafer processing, materials, device design, device technologies, circuit design, VLSI implementation, and subsystem technology. The series forms a bridge between physics and engineering and the volumes will appeal to practicing engineers as well as research scientists.
More information about this series at http://www.springer.com/series/4076
Changhwan Shin
Variation-Aware Advanced CMOS Devices and SRAM
123
Changhwan Shin Department of Electrical and Computer Engineering University of Seoul Seoul Republic of Korea (South Korea)
ISSN 1437-0387 ISSN 2197-6643 (electronic) Springer Series in Advanced Microelectronics ISBN 978-94-017-7595-3 ISBN 978-94-017-7597-7 (eBook) DOI 10.1007/978-94-017-7597-7 Library of Congress Control Number: 2016940803 © Springer Science+Business Media Dordrecht 2016 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer Science+Business Media B.V. Dordrecht
Contents
1 Introduction: Barriers Preventing CMOS Device Technology from Moving Forward . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 Overview of the Metal Oxide Semiconductor Field Eff
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