An improved analytical model for static pull-in voltage of a flexured MEMS switch
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TECHNICAL PAPER
An improved analytical model for static pull-in voltage of a flexured MEMS switch K. Guha1
•
N. M. Laskar1 • H. J. Gogoi1 • S. Chanda1 • K. L. Baishnab1 • K. Srinivasa Rao2 • N. P. Maity3
Received: 31 July 2017 / Accepted: 17 April 2018 Ó Springer-Verlag GmbH Germany, part of Springer Nature 2018
Abstract This paper presents the design of low-k meander based MEMS shunt capacitive switch with beam perforations. A closed form model to accurately calculate the pull-in voltage of the designed switch for two cases have been presented viz. a nonuniform meander based MEMS shunt switch and an uniform serpentine meander based MEMS shunt switch with perforated structure. The modified Mejis and Fokkema’s capacitance model have been used to propose a generalized closed form expression for the pull-in voltage which takes care of the nonlinear electrostatic force on the switch as well. The proposed model also takes into account the fringing field effect due to beam thickness and etched holes on the beam. The model is validated by calculating the pull-in voltage for both the meander designs under variation of various design parameters. The results obtained under most design specification variation has been found out to be in the range of 1.5–2.3 V for uniform meander based MEMS shunt switch and 3.2–5.2 V for the non-uniform counterpart. The model based results have been further verified by comparison with simulated results of full 3D FEM solver CoventorWare in a wide range of structural parameter variations. It has been observed that the performance of the proposed model is reasonably satisfactory with an average deviation of 4.73% for uniform serpentine flexure and 3.65% for non-uniform flexure based switch.
1 Introduction In recent times, radio frequency MEMS switches are becoming very popular in scientific applications such as RF switch (Liu et al. 2007), MEMS varactor (Roy et al. 2012), pressure sensor (Chauand and Wise 1988), energy harvester (Shen et al. 2008) and also in various other fields ranging from telecommunication devices, military appliances, biomedical instruments and many other micro structures. Gradually it is replacing its traditional
& K. Guha [email protected] N. P. Maity [email protected]; http://www.mzu.edu.in 1
Department of Electronics and Communication, National Institute of Technology, Silchar, India
2
Micro Electronics Research Group, Department of ECE, KL University, Guntur, AP, India
3
Department of Electronics and Communication Engineering, Mizoram University (A Central University, Govt. of India), Aizawl 796004, India
counterparts such as PIN diode, FET switches and other mechanical switches owing to its advantages such as low power consumption, high reliability, less manufacturing costs (Bedier and Roshdy 2013). Additionally, it has low insertion loss and better isolation at high frequency switching operation. However, conventional electrostatic actuation types of MEMS switches are limited by the requirement of high
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