Call for Papers: 1992 MRS Spring Meeting
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San Francisco Marriott San Francisco, CA Abstract Deadline: November 15,1991
SYMPOSIA A: AMORPHOUS SILICON TECHNOLOGY-1992 Malcolm J. Thompson, Xerox PARC, (415) 494-4561, FAX (415) 494-4919; P.G. Lecomber, University of Dundee, United Kingdom, (44) 382-23181, FAX (44) 382-202830; Yoshiro Hamakawa, Osaka University, Japan, (81) 6-844-1151, FAX (81) 6-853-1362; Arun Madan, MV-Systems, Inc., (303) 526-9016, FAX (303) 526-1408; Eric A. Schiff, Syracuse University, (315) 443-3908, FAX (315) 443-9103
E: DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY S. Ashok, Penn State University, (814) 863-4588, FAX (814) 865-3018, BITNET; SXA4@PSUVM; J. Chevallier, CNRS, France, (33) 1-4507-5050, FAX (33) 14534-4696; K. Sumino, Tohoku University, Japan, (81) 22-215-2040, FAX (81) 22-215-2041; Eicke R. Weber, University of California, Berkeley, (415) 6420205, FAX (415) 642-9164
B: CHEMICAL SURFACE PREPARATION, PASSIVATION AND CLEANING FOR SEMIC0NDUCT0R GROWTH AND PROCESSING Robert J. Nemanich, North Carolina State University, (919) 515-3225, FAX (919) 515-7331; C. Robert Helms, Stanford University, (415) 723-0406, FAX (415) 723-4659; Masataka Hirose, Hiroshima University, Japan, (81) 824-22-7111, Ext. 3428, FAX (81) 824-22-7038; Gary W. Rubloff, IBM T.J. Watson Research Center, (914) 945-1142, FAX (914) 945-4015
F: MECHANISMS OF HETEROEPITAXIAL GROWTH Matthew F. Chisholm, Oak Ridge National Laboratory, (615) 574-7333, FAX (615) 574-4143; Barbara J. Garrison, Pennsylvania State University, (814) 8632103, FAX (814) 865-3314; Robert Hull, AT&T Bell Laboratories, (908) 5826455, FAX (908) 582-3901; Léo J. Schowalter, Rensselaer Polytechnic Institute, (518) 276-6435, FAX (518) 276-8761
C: ADVANCED METALLIZATION AND PROCESSING FOR SEMICONDUCTOR DEVICES AND CIRCUITS-Il Avishay Katz, AT&T Bell Laboratories, (908) 582-2261, FAX (908) 582-4347; Yves I. Nissim, Center National Detudes, France, (33) 1-45-29-53-19, FAX (33) 1-45-29-54-05; Shyam P. Murarka, Rensselaer Polytechnic Institute, (518) 2762978, FAX (518) 276-8761; James M.E. Harper, IBM T.J. Watson Research Center, (914) 945-1663, FAX (914) 945-2141 D: PHOTO-INDUCED SPACE CHARGE EFFECTS IN SEMICONDUCTORS: PHOTOCONDUCTIVITY, SPECTROSCOPY AND ELECTRO-OPTICS Keith W. Goossen, AT&T Bell Laboratories, (908) 949-6979, FAX (908) 9496010, [email protected]; Nancy M. Maegel, University of California, Los Angeles, (213) 825-8590, FAX (213) 206-7353, [email protected]; David D. Nolte, Purdue University, (317) 494-3013, FAX (317) 494-0706, Nolte@ maxwell.physics.purdue.edu
G: ELECTRONIC PACKAGING MATERIALS SCIENCE VI Paul S. Ho, IBM T.J. Watson Research Center, (914) 945-2007, FAX (914) 9452141; Kenneth A. Jackson, University of Arizona, (602) 322-2981, FAX (602) 322-2993; Che-Yu Li, Cornell University, (607) 255-4349, FAX (607) 255-2365; G. Ferris Lipscomb, Palo Alto Research Laboratory, (415) 424-2342, FAX (415) 354-5400 H: MATERIALS RELIABILITY Cari V. Thompson, Massachusetts Institute of Technology, (617) 253-7652, FAX (617) 258-8539; J
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