Comparative Analysis of Nanowire Tunnel Field Effect Transistor for Biosensor Applications
- PDF / 2,841,783 Bytes
- 8 Pages / 595.276 x 790.866 pts Page_size
- 63 Downloads / 223 Views
REVIEW ARTICLE
Comparative Analysis of Nanowire Tunnel Field Effect Transistor for Biosensor Applications Parveen Kumar 1
&
Sanjeev Kumar Sharma 1 & BalwinderRaj 2
Received: 12 August 2020 / Accepted: 16 September 2020 # Springer Nature B.V. 2020
Abstract Nanowire based devices are most important candidate for future generation application. The unique advantage of Nanowire as a channel material is one dimensional conduction, low subthreshold leakage current as well high electron mobility. Moreover Nanowire posses unique prosperities such as chemical, optical, electrical and mechanical making them suitable for sensor design. Nanowire Tunnel Field Effect Transistor (NW-TFET) has potential bio-sensor applications as ultra-low power highly sensitive sensors alternative to conventional sensors. NW-TFET can offer sharp inverse subthreshold slope (SS) leads to low leakage current. The important working mechanism is band-to-band tunnelling (BTBT) in TFET and their structures are based on gateall-around (GAA). This paper presents, recent advancements made on process, purpose and properties of NW-TFET and comparison on various NW-TFET structures and their characteristics. Various categories include in this paper are GAA, Junctionless, hetrojunction, charge plasma, doppingless, or in combination with multigate work functions are discussed. The comparative study revealed that HT-JL-DG-NW-TFET outperforms and highly sensitive bio-sensor application and better device performance over other NW-TFET. Keywords Nanowire-TFET . Charge plasma (CP) . Band-to-band Tunnelling (BTBT) . Gate-all-around (GAA) . Biosensor
1 Introduction Tunnelling Field-Effect-Transistors (TFETs) emerged as a popular semiconductor device in the field of high sensitive bio-sensor based scientific research and industry for its merits over other semiconductor devices to deal with sub-threshold effects [1–4]. Corresponding, advancement in Nanowire research recognized as industry need to meet requirements of miniaturization [5–7]. Combining TFET and Nanowire structures offers optimized silicon device for biosensors [8–10]. Biosensors require high sensitivity to bio-molecules, while being tiny in size, and Nanowire TFET meets these requirements. Conventional MOSFETs (metal–oxide–semiconductor field-effect transistors) compete with TFETS with their ON-OFF current ratio and lower off current leakage [11].
* Parveen Kumar [email protected] 1
Nanoelectronics Research Lab, NIT, Jalandhar, India
2
National Institute of Technical Training and Research Chandigarh, Chandigarh, India
But small sub-threshold swing and high ON current operation of TFET is first choice for high sensitive devices [11–14]. The low-power electronics applications, transistor with sharp slopes are fundamental for high Ion/Ioff ratios and TFETs are most energy efficient switch with inverse subthreshold slope SS < 60 mV/dec. Various device materials have been proposed to improve ION-current. NW with hetrojunction, gate all around (GAA), junctionless, or doppingless (DL) architectur
Data Loading...
