Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances
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Fabrication of AlGaN/GaN MISHEMT with dual‑metal gate electrode and its performances Jun Hyeok Jung1 · Min Su Cho1 · Won Douk Jang1 · Sang Ho Lee1 · Jaewon Jang1 · Jin‑Hyuk Bae1 · Young Jun Yoon2 · In Man Kang1 Received: 24 December 2019 / Accepted: 6 March 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract In this study, we investigated AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) with single-metal gate (SMG) and dual-metal gate (DMG) structures through experimental measurements and technology computer-aided design simulation. The DMG structure consists of nickel (Ni) in the source-side gate and titanium (Ti) in the drain-side gate metals for the distribution of an electric field. The measurement results demonstrate that the fabricated AlGaN/GaN DMG–MISHEMT produces improved device performances; this includes higher drain current (ID), higher transconductance (gm), and higher breakdown voltage than the SMG–MISHEMT. The improvement is due to the distribution of an electric field. In addition, in terms of current collapse characteristics, the DMG–MISHEMT exhibited a small change rate in ID at various quiescent bias points. These results mean that a DMG structure leads to excellent electrical characteristics. Keywords Gallium nitride (GaN) · Dual-metal gate (DMG) · High-electron-mobility transistor (HEMT) · 2D technology computer-aided design (TCAD)
1 Introduction GaN wide bandgap semiconductors have performance advantages over Si semiconductors because they have high electron saturation velocities, high peak electric fields, and good thermal conductivity [1–5]. In particular, AlGaN/GaN high-electron-mobility transistors (HEMTs) have à low onresistance (Ron) because strong spontaneous and piezoelectric polarization at the AlGaN/GaN heterointerface induces high electron density and high electron mobility. However, AlGaN/GaN HEMTs that have a Schottky gate are subject to leakage current and trapping effect problems. In order to minimize gate leakage current, metal–insulator–semiconductor (MIS) structures have been proposed. To explore the * Young Jun Yoon [email protected] * In Man Kang [email protected] 1
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
Center for BioMicroSystems, Brain Science Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
2
merits of this approach, AlGaN/GaN MISHEMTs have been studied for various high-power and high-frequency applications such as electric vehicles, high-power conversion systems, air conditioning, and radio-frequency (RF) circuits. However, it is difficult to simultaneously satisfy a low Ron and a high breakdown voltage in AlGaN/GaN MISHEMTs because there is a trade-off between these two characteristics [6]. Long et al. [7] proposed a new structure called a dualmaterial-gate field-effect transistor (DMGFET) with improved electrical performances. This structure consists of two materials with different work func
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