Influence of illumination intensity on electrical characteristics of Eosin y dye-based hybrid photodiode: comparative st
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Influence of illumination intensity on electrical characteristics of Eosin y dye‑based hybrid photodiode: comparative study Mehmet Yilmaz1,2 · Adem Kocyigit3 · Sakir Aydogan1,4,5 · Umit Incekara6,7 · Yilmaz Sahin4 · Hatice Kacus4 Received: 29 March 2020 / Accepted: 20 July 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract We reported the optoelectronic performance of organic/inorganic hybrid junction photodiode based on Eosin y/silicon (Si). For this purpose, we fabricated Eosin y/n-Si and Eosin y/p-Si structures and demonstrated that both devices exhibited strong photodiode characteristics to the increasing light power depending on current–voltage (I–V) measurements. Furthermore, the XRD and SEM analyses of Eosin y film were performed to analyze structural and topographical features of the film. The electrical measurements of Eosin y/n-Si and Eosin y/p-Si photodiodes were carried out in both dark and under various illumination intensities in the range of 100–400 mW/cm2. The main device parameters, such as ideality factor, barrier height, and responsivities of both devices, were determined from the I–V characteristics. The obtained photocurrent values in reverse biases are higher than the dark current at the same reverse bias for both Eosin y/n-Si and Eosin y/p-Si photodiodes. So, this confirmed that light produces photocurrent due to the formation of electron–hole pairs as a result of light absorption in the Eosin y film. Moreover, the C–V measurements were performed on both photodiodes to characterize capacitive performance of the Eosin y films. The fabricated photodiodes based on Eosin y thin films present great promise for future optoelectronic device applications. Keywords Eosin y dye · Organic photodiode · Detectivity · Photoresponsivity
1 Introduction * Sakir Aydogan [email protected]
Mehmet Yilmaz [email protected]; [email protected]
1
Advanced Materials Research Laboratory, Department of Nanoscience and Nanoengineering, Graduate School of Natural and Applied Sciences, Ataturk University, 25240 Erzurum, Turkey
2
Department of Science Teaching, Faculty of K.K. Education, Ataturk University, 25240 Erzurum, Turkey
3
Department of Electrical and Electronics Engineering, Engineering Faculty, Igdir University, 76000 Igdir, Turkey
4
Department of Physics, Faculty of Sciences, Atatürk University, 25240 Erzurum, Turkey
5
Department of Electrical and Electronics Engineering, Ardahan University, 75000 Ardahan, Turkey
6
Department of Biology, Faculty of Science, Atatürk University, 25240 Erzurum, Turkey
7
Department of Molecular Biology and Genetics, Faculty of Science, Erzurum Technical University, Erzurum, Turkey
Organic semiconducting materials have gained great interest in a last few decades for electronic and optoelectronic applications [1, 2]. They can be amorphous or semicrystalline form, exhibit short length diffusion and have low charge carrier mobility of photo-generated carriers [3]. Owing to having this properties, organic semicond
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