Measuring The Work Functions Of PVD TaN, TaSiN And TiSiN Films With A Schottky Diode CV Technique For Metal Gate CMOS Ap

  • PDF / 415,413 Bytes
  • 6 Pages / 612 x 792 pts (letter) Page_size
  • 40 Downloads / 286 Views

DOWNLOAD

REPORT

Data Loading...

Recommend Documents
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion

175 85 114KB

Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO 2 Gate Dielectric

185 84 160KB

Nickel Silicide Work Function Tuning Study In Metal-Gate CMOS Applications

178 74 254KB

Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV

218 8 337KB

Metal/Porous Silicon Schottky Diode Structures as Sensors

198 2 77KB

Tuning of Metal Work Functions with Self-Assembled Monolayers

154 76 328KB

Electrical and Material Evaluation of the MOCVD TiN as Metal Gate Electrode for Advanced CMOS Technology

178 42 703KB

Tunable Workfunction with TaN Metal Gate on HfO 2 -Hf x Si y O Dielectrics

157 100 56KB

Diamond Schottky Barrier Diode with Fluorine- and Oxygen-Termination

214 71 531KB

Work Function Tuning of Mo x Si y N z metal gate electrode for Advanced CMOS Technology

158 39 103KB

Impact of CMOS TiN metal gate process on microstructure and its correlation with electrical properties

165 8 1MB

Low Temperature Metal Organic Chemical Vapor Deposition of Aluminum Oxide Thin Films for Advanced CMOS Gate Dielectric A

185 25 218KB