Design and simulation of RF-MEMS shunt switch for K-band applications
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TECHNICAL PAPER
Design and simulation of RF-MEMS shunt switch for K-band applications K. Girija Sravani1,2 Received: 24 September 2020 / Accepted: 10 October 2020 Ó Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract This paper presents the design and simulation of shunt type switch with meanders and perforations. The proposed switch is utilizing silicon nitride (Si3N4) as a dielectric material within the transmission line and the beam is considered as gold (Au), and it offers several benefits in terms of performance such as low spring constant, pull-in voltage, and also good S-parameters. The pull-in voltage is obtained as 4.6 V, the dielectric materials are utilized to improve the capacitance of the switch, which is having is 4.62 fF and 3.94 pF. The Electro-magnetic analysis is done by using the HFSS tool, the return and insertion of the proposed switch are maintained as - 44.69 dB and 0.415 dB at 22 GHz frequency. The isolation is observed at - 40.37 dB at 20 GHz frequency. The proposed device having good results at the 20–22 GHz frequency range. The proposed switch, which operates in the range of 1–25 GHz, gives good results when associated with other devices and is utilizing for K-band and wireless communication systems.
1 Introduction In modern years, RF MEMS devices produce developed and become grown potential effectiveness in commercial and defense communications over a wide frequency range (Sekhar et al. 2014). MEMS technology appears very small size high-frequency switches with low actuation voltage, good switching time, and best RF characteristics (Ma et al. 2017). MEMS switches are invented working on Radio Frequencies (RF) was the main focus of intensive research in the past few years in both academic and modern institutions (Goldsmith et al. 1998; Singh et al. 2015; Rangra et al. 2005). RF MEMS switches show orders of magnitude improvements in quality and loss over conventional switches (Muldavin and Rebeiz 2000). RF MEMS switches are one of the most important in micromechanical processing technology that replaces traditional semiconductor current switches such as GaAs FETs and PiN diodes (Singh et al. 2013). PIN
& K. Girija Sravani [email protected] 1
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation (Deemed To Be University), Green Fields, Guntur, Andhra Pradesh, India
2
National MEMS Design Center, Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam, India
diodes are more affordable than coaxial switches but need an additional amplifier network to compensate for losses introduced by the switching network. The Basic microwave switches currently used in the microwave industry is mechanical switches and semiconductor switches such as pin diodes and field-effect transistors (Sravani et al. 2018). Semiconductor switches offer the advantages of low insertion loss, great out-of-state isolation, and high power control capabil
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