Dielectric Modulated Schottky Barrier TFET for the Application as Label-Free Biosensor
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ORIGINAL PAPER
Dielectric Modulated Schottky Barrier TFET for the Application as Label-Free Biosensor N. K. Hema Latha 1 & Sumit Kale 1 Received: 6 November 2019 / Accepted: 15 December 2019 # Springer Nature B.V. 2020
Abstract This paper reported a dielectric modulated (DM) Schottky Barrier (SB) TFET (DM SB TFET) as label free biosensor applications. In a proposed device, we have created a nanogap cavity within the gate dielectric near the source end for sensing biomolecules. Therefore, the modulation of the SB width at the source end occurs due to presence of biomolecules in the form of different dielectric material used to fill the nanogap cavity. Hence, the current flow from source to drain is highly sensitive to the change in properties of dielectric materials. Here, we have investigated the performance of the proposed device in terms of its sensing capability by variation in dielectric constant and, charge density. Also, the performance of the device is observed for different cavity length and, thickness for different drain and source bias. Results show high sensitivity in terms of change in drive current of the device for the variation in the dielectric constant and charge density. Simulations have been performed by the two dimensional SILVACO ATLAS device simulator. Keywords Dielectric modulated . Schottky barrier . TFET . Biosensor . Nanogap . Cavity . Sensitivity
1 Introduction Biosensors are playing an important role for cost effective surveillance of diseases and inspection of bio hazards [1, 2]. Within the different kinds of biosensing technologies, Field effect transistor (FET) based biosensors are widely used due to their numerous advantages such as ultra sensitivity detection, low manufacturing cost and, mass production capability [3, 4]. Field effect transistor (FET) is a device, which uses electric field to control the flow of current. Biosensor based FET having biological recognition element and field effect transistor having a various advantages in terms of miniaturization, cost-effective label free detection. Biosensors are capable of detecting neutral biomolecules. FET based label free biosensors are widely used because of potentiality to detect biological species. The FET based label free biosensing has attracting so many researchers due to its compatibility, cost-effective, and high sensitivity.
* Sumit Kale [email protected] 1
Department of Electronics and Communication Engineering, Madanapalle Institute of Technology & Science, Madanapalle, AP 517325, India
To detect biomolecules, the first FET based biosensors was developed using Ion Sensitive FET (ISFET) [5, 6]. However, ISFET was not capable to detect noncharged biomolecules. In the recent past, various novel device technology and structures such as Tunnel FET (TFET), Impact Ionization MOSFET (IMOS) and Junction less FET (JFET) were reported for biosensor applications [7–11]. However, the abovementioned devices are suffer from various issues related to low drive current, high off-state leakage current, random dopant fluctuations a
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