Detection of Biomolecules Using Charge-Plasma Based Gate Underlap Dielectric Modulated Dopingless TFET
- PDF / 898,634 Bytes
- 8 Pages / 595.276 x 790.866 pts Page_size
- 92 Downloads / 195 Views
Transactions on Electrical and Electronic Materials https://doi.org/10.1007/s42341-020-00205-z
REGULAR PAPER
Detection of Biomolecules Using Charge‑Plasma Based Gate Underlap Dielectric Modulated Dopingless TFET Sachin K. Verma1 · Shailendra Singh1 · Girish Wadhwa1 · Balwinder Raj1 Received: 19 October 2019 / Revised: 3 May 2020 / Accepted: 30 May 2020 © The Korean Institute of Electrical and Electronic Material Engineers 2020
Abstract In this Paper, Dielectric Modulated Dopingless Double Gate Transistor (DM-DLDGTFET) device is proposed for the free label detection of the charged and neutral biomolecules. A charge-plasma principle is used for label-free detection of biosensors to reduce the processing complexity and cost of nanoscale products. Firstly, the simulations for the proposed device are carried using Atlas and different electrical parameters are analyzed using the same. It is observed that the dielectric constant and different biomolecule charges for example, protein, DNA, enzyme, cell and many more molecules affects the electrical characteristic of the device. The deposition of different workfunction materials over silicon body will do the formation of p+ source and n+ drain region in the DM-DLDGTFET. In addition, by etching the segment of the gate oxide layer to the source end for sensing biomolecules, a nano gap cavity is embedded within the dielectric gate. When biomolecule get immobilized at cavity region, the electrostatic properties of device for example, drain current, Ion/Ioff, subthreshold slope, average subthreshold slope, sensitivity get influenced. The energy band diagram and the device’s surface potential for both neutral and charged biomolecules are also discussed. For the validation of the proposed DL-TFET structure, the simulation results are calibrated with reported results and significant improvement are observed in the proposed structure. Keywords Dielectric modulation (DM) · Tunnel FET · Radom dopant fluctuation (RDF) · Charge plasma · Gate stack · Short channel effects (SCEs) · Sensitivity · Biosensor JEL Classification 2.04 · 3.02 · 4.00 · 6.00 · 6.09
1 Introduction Over the past decades, continuous down scaling of the metal oxide-semiconductor (MOS) transistors in according to the Moore’s law has improved with the device performance and density but comes with the big challenge of short channel effects [1, 2].To keep pace with growth, a few substitutes can * Shailendra Singh [email protected] Sachin K. Verma [email protected] Girish Wadhwa [email protected] Balwinder Raj [email protected] 1
Nano Electronics Research Laboratory, Department of Electronics and Communication Engineering, NIT Jalandhar, Jalandhar, India
be discussed as far as product choices, system models and circuit design. Continued downscaling of CMOS technology has significantly increased efficiency, usability and packaging density at the expense of ascending in power dissipation and complicated nano scale CMOS devices manufacturing technique. The rise in power dissipation was du
Data Loading...
