Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction
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ORIGINAL PAPER
Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction N. Nagendra Reddy 1 & Deepak Kumar Panda 1 Received: 6 August 2020 / Accepted: 14 October 2020 # Springer Nature B.V. 2020
Abstract In this paper, a dielectric modulated dual material gate TFET (DM-DMG_TFET)based biosensor is proposed. In order to detect various biomolecules, a nanogap cavity is formed by the overlapping the gate on the drain side. The change in ambipolar current is considered as the sensing parameter by changing the dielectric constants of various immobilized biomolecule inside the nano cavity. A complete investigation on the performance of the biosensor is also done by considering different positions and filling factor of the biomolecules inside the nano cavity region. The dual-material gate structure is considered with dissimilar work functions (фM1 < фM2), which can effectively reduce the ambipolar current by enhancing the barrier width at channel-Drain junction. The proposed structure deliberately reduces ambipolar current and increases the sensitivity as compared to the single material gate structure. In this work we report a drift in the sensitivity from 104 to 106 for low dielectric constant biomolecules. Keywords Ambipolar . Biosensor . Sensitivity . TACD . TFET
1 Introduction The early-stage detection of the disease increases the lifespan of humans and decrease the effective cost for the treatment or medication. If we failed to detect the disease at the earliest stages, the virus/bacteria gets ample of time to multiply its number from minimum to maximum as a result the cost of treatment and life risk were increases. The utilization of present-day laboratory technology for early-stage detection is highly challenging since it requires highly expensive equipment and also time-consuming. The biosensors have emerged as the replacement for the traditional clinical testing laboratories. Among all types of biosensors, the field-effect transistor (FET) based biosensor becomes the potential candidate for the detection of the biomolecules. The introduction of the dielectric modulation technique for the detection of biomolecules enhances the performance of the FET based biosensors in terms of label-free detection and high sensitivity [1–11]. The speed and the selectivity are the fundamental criteria for the design of next-generation biosensors. * Deepak Kumar Panda [email protected] 1
Microelectronics and VLSI Design Group, School of Electronics, VIT-AP University, Amaravati, Andhra Pradesh 522237, India
So, to accomplish the requirement of the next generation biosensors, the conventional MOSFET device size needs to be scaled down. The Short Channel Effects (SECs) [12, 13] encountered by MOSFET in the process of miniaturization does not permit any further scaling of the device. The tunnel fieldeffect transistor gives way for the design of next-generation biosensors by suppressing the difficulties faced by the conventional FET (CFET) [13]. Numerous analysts an
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