Improvement the Breakdown Voltage and the On-resistance in the LDMOSFET: Double Buried Metal Layers Structure
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ORIGINAL PAPER
Improvement the Breakdown Voltage and the On-resistance in the LDMOSFET: Double Buried Metal Layers Structure Ali Shokouhi Shoormasti 1 & Abdollah Abbasi 1
&
Ali A. Orouji 1
Received: 30 May 2020 / Revised: 17 August 2020 / Accepted: 1 September 2020 # Springer Nature B.V. 2020
Abstract In this paper, a new method is investigated to improve the breakdown voltage in the lateral power MOSFET transistors. The structure is based on Double Buried Metal Layers in the Lateral Diffused MOSFET and it is called DBML-LDMOSFET. The metal layers in the buried oxide under the drift region cause the electric field to be more uniform than the conventional structure. In the DBML-LDMOSFET Structure, the breakdown voltage is improved 25% compared to conventional structure and also the specific on-resistance is almost 11.32 mΩ.cm2. In order to investigate the performance of the structures, SILVACO-ATLAS software has been used and the results have been extracted. Keywords Breakdown Voltage . LDMOSFET . On-resistance . Power MOSFET
1 Introduction Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) devices have been used in high-voltage ICs (HVICs) for many applications, such as the motor controller, power converters, and automotive electronics [1]. The silicon on insulator (SOI) structure is useful for the fabrication of high-voltage lateral devices. The SOI structure has desirable features such as: low leakage current, isolation between devices, and the capability of operation at higher environmental temperature [2–6]. But this structure has some problems such as preventing the extension of vertical electric field which causes the reduction of the breakdown voltage in the SOI– LDMOSFET and the self-heating phenomenon which causes the on-resistance of devices to increase [7]. The breakdown voltage and the on-resistance are the most important parameters in the LDMOSFET transistors. In order to improve each of them, various methods have been proposed in the SOILDMOSFET. Some of them for improving breakdown voltage include the reduced surface field (RESURF) principle [8–12], patterned buried oxide layers, fixed charges [13–15], and the enhanced dielectric field (ENDIF) effect [16, 17]. Also * Abdollah Abbasi [email protected] 1
Electrical and Computer Engineering Department, Semnan University, Semnan, Iran
the various methods have been proposed for reducing the onresistance in SOI-LDMOSFET [18–20]. One way to increase the breakdown voltage is making the distribution of the electric field uniform [21]. There are two major peaks in the electric field curve that restrict the breakdown voltage. For the uniformity of the electric field, we can introduce additional peaks in its curve [22]. In this paper, we used this method to improve breakdown voltage. To reach this goal we used double buried metal layers in the BOX under drift region in the SOI-LDMOSFET structure to add more peaks in the electric field curve. This technique improved the on-resistance, too. In this article, the proposed structure is identified a
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