Novel Vertical GAA-AlGaN/GaN Dopingless MIS-HEMT: Proposal and Investigation
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Transactions on Electrical and Electronic Materials https://doi.org/10.1007/s42341-020-00252-6
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Novel Vertical GAA‑AlGaN/GaN Dopingless MIS‑HEMT: Proposal and Investigation Ravi Ranjan1 · Nitesh Kashyap1 · Ashish Raman1 Received: 3 August 2020 / Revised: 7 October 2020 / Accepted: 20 October 2020 © The Korean Institute of Electrical and Electronic Material Engineers 2020
Abstract This paper presents a gate all around (GAA) AlGaN/GaN HEMT (GAA-MIS-HEMT) with AlN as an interfacial passivation layer. Gate all around technique is used to improve the performance of device such as carrier concentration, electric field and current density at the interface of AlGaN & GaN. The enhanced control over the 2DEG due to gate all around structure helped in attaining superior performance. A l2O3 is used as a dielectric. The results of GAA-MIS-HEMT are compared with planar-MIS-HEMT, which shows that the GAA-MIS-HEMT provides better ON-state current, OFF-state current, transconductance, cutoff frequency (11 GHz) and ON-state to OFF-state current ratio (1011), ON-resistance (0.9Ω-cm2) and subthreshold slope (63 mV/dec). All the layers of proposed structure are dopingless. Keywords Gallium nitride (GaN) · Gate all around (GAA) · Planar · Dopingless · Al2O3 · AlN
1 Introduction For a substantial period of time, silicon has been mostly used in many power electronics devices. But due to need of high current, voltage, energy efficiency and power density capability, there is requirement of new material for power application. Material based limitations of silicon are such as saturation velocity, efficiency, operating voltage, operating temperature and power handling capability. The above limitations of silicon are resolved by the use of wider bandgap materials such as Gallium Arsenide (GaAs), Gallium Nitride (GaN) and Silicon Carbide (SiC). GaN is preferred for power devices to other wide bandgap material due to high critical field, large bandgap, thermal conductivity and high saturation field [1]. GaN can be easily deposited on Silicon substrate which is less expensive than other wide bandgap material including few interfacial defects. Table 1 gives the Concise and Informative Title The Aim of this paper is to propose and discuss the GAA-MIS-AlGaN/GaN HEMT and compare it with Planar-MIS-AlGaN/GaN HEMT. Gate all around technique is used to improve the transport characteristics such as electric field and current density at the interface of AlGaN & GaN. * Ravi Ranjan [email protected] 1
Dr. B.R. AmbedkarNational Institute of Technology, Jalandhar, Punjab 144011, India
electronics and material properties of Si, GaN, 4H–SiC and GaAs. Because of its wide bandgap, GaN is better choice for high power applications. There is formation of heterostructure due to polarization property in the AlGaN/GaN layers. The two-dimensional electron gas (2DEG) is formed at the interface of different bandgap material. Due to the presence of 2DEG at the hetrojunction in HEMT, it is possible to operate high-frequency. From above utility
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