Performance Enhancement of Novel Dopingless TFET Using Raised Source and Recessed Drain
- PDF / 1,606,667 Bytes
- 10 Pages / 595.224 x 790.955 pts Page_size
- 17 Downloads / 201 Views
ORIGINAL PAPER
Performance Enhancement of Novel Dopingless TFET Using Raised Source and Recessed Drain Cong Li1
· Haofeng Jiang1 · Jiamin Guo1 · Hailong You1 · Weifeng Liu1 · Yiqi Zhuang1
Received: 21 January 2020 / Accepted: 20 August 2020 © Springer Nature B.V. 2020
Abstract A novel raised source and recessed drain dopingless tunneling FET (RSRD-DL-TFET) is proposed in this paper. By using TCAD simulation, the DC electrical characteristics, energy-band diagrams, carrier concentrations and band-to-band tunneling generation rate of RSRD-DL-TFET are analyzed, as compared with planar dopingless tunneling FET (PDLTFET). Besides, analog/RF and transient performances for both devices are also investigated, including transconductance, parasitic gate capacitance, cut-off frequency, gain bandwidth product and fall propagation delay. Benefiting from the design of raised source and recessed drain, the proposed device not only creates the line tunneling in the source region, but also reduces the ambipolar tunneling distance at drain/channel interface. As a result, the proposed RSRD-DL-TFET could provide higher on-current, steeper subthreshold swing, lower ambipolar current, higher cut-off frequency and better transient performance than PDL-TFET. Keywords TFET · Dopingless · TCAD · Raised source · Ambipolar current
1 Introduction As a promising replacement to the conventional metaloxide-semiconductor field-effect transistor (MOSFET) in low-power applications, tunneling field-effect transistor (TFET) has been the subject of much concern and attention since it was proposed [1–5]. Instead of the diffusion over the barrier in MOSFET, TFET utilizes band-toband tunneling (BTBT) through the barrier for the carrier transport [6, 7]. As a result, TFET could provide steeper subthreshold swing (SS), lower off-state current (Ioff ) and better immunity to short-channel effects [8–11]. But, low on-state current (Ion ), large ambipolar current (Iambi ) and bulk or interface trap-assisted tunnel (TAT) are the main shortcomings and severely limit the application of TFET [12–14]. Therefore, much literature has been published to overcome the drawbacks in the recent years by engineering
This work was supported by the National Nature Science Foundation of China (Grant Nos. 61574109 and 61204092). Cong Li
[email protected] 1
Xidian-SMiT EDA Institute, School of Microelectronics, Xidian University, Xian 710071, China
on its material, structure, doping level and gate work function [15–19]. Among them, the dopingless TFET (DLTFET) have attracted much attention for it could form a relatively abrupt junction by using charge plasma with appropriate work function rather than physical doping [20– 23]. So, as compared with another approaches, DL-TFET significantly reduces the bulk TAT induced degradation in subthreshold regime, so provides steeper switching behavior along with low off-state leakage current [24, 25]. Besides, without complex ion implantation process and expensive thermal annealing technique, DL-TFET also possesses simpler fabri
Data Loading...
