Design and Performance Analysis of Symmetrical and Asymmetrical Triple Gate Dopingless Vertical TFET for Biorecognition
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ORIGINAL PAPER
Design and Performance Analysis of Symmetrical and Asymmetrical Triple Gate Dopingless Vertical TFET for Biorecognition Tanu Wadhera 1 & Girish Wadhwa 1
&
Tarun Kumar Bhardwaj 1 & Deepti Kakkar 1 & Balwinder Raj 1
Received: 17 July 2020 / Accepted: 1 September 2020 # Springer Nature B.V. 2020
Abstract The present paper proposes a dielectric modulation based Triple Gate Doping Less Tunnel Field Effect Transistor (TG-DLTFET) biosensor with a cavity introduced underneath the gate and source metal for symmetrical and asymmetrical device to recognize very small size biomolecules such as Amino Acids (AAs). The proposed n + pocket doped vertical device aims to achieve high sensitivity with lower short channel effects. The placement and width of the n + pocket layer within the source are reformed with the goal of acquiring the higher current switching ratio. The variation in the device’s electrical parameters (surface potential, drain current and sensitivity) corresponding to dielectric constant and charge density reflected the biorecognition process in the biosensor. Additionally, the impact of variations in device geometry (spacer length, cavity length, cavity thickness, and gate misalignment effects) on the drain current and drain current sensitivity of device have also been evaluated and reasoned, respectively. The results reflect that with proper choice of the geometric parameters, the device sensitivity can be attained up to 1010. Thus, the present findings reflected that TG-DLTFET has a better sensing capability as a biosensor, together with a low value of short channel effect and leakage current. The proposed n + pocket doped vertical device has a significant potential to detect varations in AAs and DNA. Key words Charge Plasma . Amino Acids . Dopingless Tunnel FET (DLTFET) . Tripple Gate (TG) . Sensitivity . Biosensor
1 Introduction Biosensors are analytical devices that detect the target biological molecule in a label or label-free manner and generate a signal accordingly. The label-free methods are widely preferred, since they provide more specificity and sensitivity without any additional tag requirement as well as can reduce analysis time and cost [1–5]. Biosensors have shown enormous potential in the detection of small biomolecules with high sensitivity [6, 7]. In case of small biomolecule’s detection (size 1). Also, gate capacitance enhances, which further leads to a rise in the drain current of TG-DLTFET [16]. The high k and corresponding high capacitive effect bends the band with a significant amount at the source-pocket interface for n + pocket doped vertical TG-DLTFET. Moreover, the presence of n + −pockets and occurrence of lateral as well as vertical tunneling events shows an improvement in BTBT mechanism for the proposed structure. The variation in the
Silicon Table 1 Device parameters of TG-DLTFET
Parameters
Values
Gate metal length (LGM) n + pocket doping Silicon substrate thickness (TSi) Channel doping Gate, source and drain oxide thickness (tox)
50 nm 5 × 1018 cm−3 10 nm
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