Photoluminescence and electroluminescence properties of FeSi 2 -Si structures formed by MEVVA implantation
- PDF / 219,416 Bytes
- 6 Pages / 612 x 792 pts (letter) Page_size
- 103 Downloads / 232 Views
A9.7.1
Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation C.F. Chow1,3, Y. Gao1,3, S.P. Wong1,3,#, N. Ke1,3, Q. Li2,3, W.Y. Cheung1,3, G. Shao4, M.A. Lourenco5, K.P. Homewood5 1 Dept. of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China 2 Dept. of Physics, The Chinese University of Hong Kong, Hong Kong, China 3 Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China 4 School of Engineering, University of Surrey, Guildford, Surrey GU2 7XH, UK 5 School of Electronics Engineering, Computer and Mathematics, University of Surrey, Guildford, Surrey GU2 7XH, UK ABSTRACT We have prepared FeSi2 precipitates of nanometer size in Si by ion implantation using a metal vapor vacuum arc (MEVVA) ion source and studied their photoluminescence properties. Broad photoluminescence (PL) spectra at around 1550 nm were observed for all samples attributed to emission from the FeSi2 precipitates. It was found that all the PL spectra can be decomposed into two peaks, a main peak at near 1530 nm and a satellite peak at 1607 nm. Samples with a furnace annealing (FA) step at a lower temperature of 850oC are found to have a main peak position at a longer wavelength close to 1540 nm. For samples with a FA step at higher temperatures, the main peak position shifts to shorter wavelengths of near 1525 nm. In addition, we have also prepared MOS structures with implanted FeSi2 precipitates incorporated in the structures and measured their EL properties. The EL properties from these FeSi2-Si MOS structures after various thermal treatments were measured as a function of temperature from 80 to 300 K. Our preliminary results show that clear EL signals are obtained even at room temperature under appropriate processing conditions. INTRODUCTION Semiconducting β-FeSi2 is a promising material for silicon-based light-emitting device applications and has attracted a lot of research interest in the past decade [1-5]. β-FeSi2 is reported to have a bandgap energy of near 0.8 eV corresponding to a wavelength of 1.55 µm. Recently, room temperature emission from β-FeSi2 LED has also been demonstrated [6]. There is also a recent report in the literature of the observation of room temperature electroluminescence (EL) from Si metal-oxide-semiconductor (MOS) structures [7]. We have prepared FeSi2 precipitates of nanometer size in Si by ion beam synthesis using a metal vapor vacuum arc (MEVVA) ion source and studied how the structures and photoluminescence (PL) properties of the implanted FeSi2 particles depend on the implantation temperature [8-10]. In this work, we shall report a detailed analysis of the PL line shape of low temperature implanted FeSi2 and relate the observed line shapes to the thermal treatment conditions. We have also fabricated simple metal-oxide-semiconductor (MOS) device structures with implanted FeSi2 precipitates #
Contact author, E-mail: [email protected]
A9.7.2
incorporated into the structures and measured th
Data Loading...
