Photonic and optoelectronic properties of layered semiconductors
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ORIGINAL ARTICLE
Photonic and optoelectronic properties of layered semiconductors Arslan Usman1,2 · Abdul Sattar2 · Hamid Latif3 · Muhammad Rafique4 Received: 15 May 2020 / Accepted: 3 July 2020 © King Abdulaziz City for Science and Technology 2020
Abstract Monolayers of atomically thin semiconductors show novel excitonic physics with tunable optical and electronic properties. Excitons along with its charged complexes have significant role in future optoelectronic devices with respect to carrier transport and recombination. Monolayer of M oSe2 and W Se2 have been investigated for their charge transport and photo response at room and cryogenic temperatures in order to optimize the device for enhanced sensitivity and detectivity. Low temperature PL measurements depicts the decoupling of phonons from excitons due to reduction of non-radiative channels. At cryogenic temperature the maximum photo response of the WSe2 and MoSe2 based detector is 7.2 AW−1 and 5.0 AW−1, respectively, whereas the maximum attainable detectivity as observed for device fabricated from WSe2 and MoSe2 is 2.0 × 1011 Jones and 3.5 × 108 Jones, respectively. This indicates that phonon decoupling and scattering needs to be optimized for better device performance. Keywords Exciton dynamics · Band renormalization · Electron transport · TMDCs
Introduction Conventional semiconductor technology based on Si had been widely used in past to fabricate ICs and transistors, whereas GaAs, InGaAs and other III–V semiconductors for optoelectronic (Wilson and Hawkes 1989) applications, with substrates and quantum films (Zhang et al. 1993) fabricated through an epitaxial growth process (Capper et al. 2017). The discovery of graphene and its exceptional properties as free standing monolayer as compared to its bulk counter parts have inspired researchers to investigate and explore other layered materials (Butler et al. 2013) which possess bandgap. More recently the exploration of such materials at mono layer which holds direct bandgap is the core area of research in semiconductors (Akay 2018; Kandemir and Akay * Arslan Usman [email protected] 1
Faculty of Physics and Materials Sciences Centre, PhilippsUniversität Marburg, 35032 Marburg, Germany
2
Department of Physics, COMSATS University Islamabad - Lahore Campus, Lahore, Pakistan
3
Department of Physics, Forman Christian College University, Lahore, Pakistan
4
Department of Physics, University of Sahiwal, Sahiwal, Pakistan
2018) which is attributed to decoupling of atoms at K-point and d-orbital hybridization of metal atoms. This will help in realizing smart optoelectronic devices (Cheng et al. 2019; Kang et al. 2020). One group of such materials, which consists of three atomic layers arranged in MX2 format is characterized as Transition Metal dichalcogenides (TMDCs), depending upon the combination and stacking of M and X atoms, the constituent monolayer can hold properties of semiconductor, metal and even superconductor (Wang et al. 2012). In monolayer form there is dege
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