Turn-off modes of silicon carbide MOSFETs for short-circuit fault protection

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ORIGINAL ARTICLE

Turn‑off modes of silicon carbide MOSFETs for short‑circuit fault protection Jianzhong Zhang1   · Haifu Wu2 · Yaqian Zhang1 · Jin Zhao1 Received: 30 August 2020 / Revised: 28 October 2020 / Accepted: 30 October 2020 © The Korean Institute of Power Electronics 2020

Abstract With the rapid development of semiconductor technology, the applications of silicon carbide (SiC) MOSFETs have been booming in recent years, where short-circuit fault protection plays an important role. In this paper, voltage and current waveforms under different short-circuit faults are analyzed. Then, two types of turn-off modes, namely a soft turn-off mode and a two-stage turn-off mode are introduced. The peak voltage, short-circuit energy and anti-interference performances of SiC MOSFETs under the different turn-off modes are analyzed and compared at various DC bus voltages. The obtained experimental results show that the soft turn-off mode can reduce voltage spikes. However, it needs a blanking time to improve the anti-interference performance of the system, which increases the short-circuit energy. For the two-stage turn-off mode, the anti-interference performance of the system is improved and the short-circuit energy is obviously decreased. However, the peak voltage generated by the two-stage turn-off mode is slightly larger than that of the soft turn-off mode. On the whole, the two-stage turn-off mode is more competitive than the soft turn-off mode for the short-circuit fault protection of SiC MOSFETs. Keywords  Gate driver · SiC MOSFET · Short-circuit fault · Turn-off mode · Two-stage turn-off

1 Introduction SiC MOSFET has been applied in various industries, such as switching power supplies, motor drives and renewable power generation due to its advantages of high-voltage withstand capability, low on-resistance and fast switching speed [1–3]. With the development of technology and the increasing capacity of SiC-based power devices, it is inevitable that the SiC MOSFET will be one of the dominating power devices in the future. At present, many studies have been carried out on the topic of short-circuit protection for SiC MOSFETs. The authors of [4–7] put forward short-circuit protection methods based on desaturation detection. The author of [8] proposed an inductance current detection method for shortcircuit protection. The authors of [9, 10] used gate voltage * Jianzhong Zhang [email protected] 1



School of Electrical Engineering, Southeast University, Nanjing, China



State Grid Yancheng Power Supply Company, Yancheng, China

2

detection methods to achieve short-circuit protection. The authors of [11, 12] put forward a short-circuit detection method based on a Rogowski coil. The authors of [13] studied the short-circuit withstand capability of SiC MOSFETs at different temperatures. The presented experiment results show that the short-circuit withstand capability decreases with an increase of operation temperature. In [14], the influences of driving resistance and driving voltage on the shortcircuit characteristics