Reconfigurable vertical field-effect transistor based on graphene/MoTe 2 /graphite heterostructure
- PDF / 234,652 Bytes
- 8 Pages / 595 x 842 pts (A4) Page_size
- 35 Downloads / 170 Views
. RESEARCH PAPER .
October 2020, Vol. 63 202402:1–202402:8 https://doi.org/10.1007/s11432-019-2778-8
Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure Cong WANG† , Chen PAN† , Shi-Jun LIANG, Bin CHENG* & Feng MIAO* National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China Received 3 November 2019/Revised 25 December 2019/Accepted 21 January 2020/Published online 3 September 2020
Abstract Reconfigurable field-effect transistors have attracted enormous attention over the past decades because of their potential in implementing logic and analog circuit functions with fewer resources of transistors compared with complementary metal-oxide-semiconductor transistors. However, the miniaturization of traditional reconfigurable transistors is still a challenge owing to their inherent planar multi-gate structure. Herein, we fabricated a dual-gate vertical transistor based on graphene/MoTe2 /graphite van der Waals heterostructure and demonstrated a switchable n-type, V-shape ambipolar and p-type field-effect characteristics by varying the voltages of the top gate and drain electrodes. According to the band diagram analysis, we reveal that the reconfiguring ability of the field-effect characteristics stems from the asymmetric injection efficiency of the carriers through the gate-tunable barriers at the interfaces. Our results offer a potential approach to achieve device miniaturization of reconfigurable transistors. Keywords reconfigurable field-effect transistor, vertical transistor, graphene/MoTe2 , van der Waals heterostructure, ambipolar transistor, dual-gate transistor Citation Wang C, Pan C, Liang S-J, et al. Reconfigurable vertical field-effect transistor based on graphene/MoTe2 /graphite heterostructure. Sci China Inf Sci, 2020, 63(10): 202402, https://doi.org/10.1007/ s11432-019-2778-8
1
Introduction
Traditional n and p-type field-effect transistors (FET) are building blocks for integrated digital and analog circuits. However, the specific field effect characteristic of a traditional FET device cannot be changed owing to using the chemical doping approach. These types of FETs are facing challenge in meeting the increasing demands for massive data processing. To overcome these challenges, reconfigurable FETs (RFETs) based on materials with ambipolar field-effect characteristics [1–13] that possess different operation modes and multiple functions, [14–24] were proposed as a promising solution to build multifunctional circuits with fewer compounds [16, 25–28]. Previously reported RFETs are based on a dual-gate planar structure [29–31]. The footprint of the RFETs has no advantage over that of the conventional FETs, which is undesirable to the high-density integration of RFETs. Fortunately, the vertical transistor [32–49] provides an alternative approach to realize RFETs with a compact structure, which is promising in the high-density integration of RFETs. In
Data Loading...
