Synthesis, characterization and anti-bacterial activity of Mg and Ba-doped ZnO Nanoparticles
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Synthesis, characterization and anti-bacterial activity of Mg and Ba-doped ZnO Nanoparticles L. Bruno Chandrasekar1,*
, M. Divya Gnaneswari2, and M. Karunakaran3
1
Department of Physics, Periyar-Maniammai Institute of Science & Technology, Vallam, India Department of Zoology, Gargi College, Delhi, India 3 Department of Physics, Alagappa Govt. Arts College, Karaikudi, India 2
Received: 24 May 2020
ABSTRACT
Accepted: 24 September 2020
Mg and Ba-doped zinc oxide nanoparticles were prepared by chemical precipitation method. The prepared nanoparticles were annealed at 700 °C. The Wurtzite geometry was confirmed in the X-ray diffraction. The crystallite size was found from the Debye-Scherer’s formula. The dopant Ba highly influences crystalline size than the dopant Mg. From Tauc’s plot, the band gap of the prepared samples was calculated and analyzed. The red shifted band gap was observed due to the metal dopant. From the charge carrier concentration, it was observed that the prepared nanoparticles were p-type in nature. The refractive index decreases as the metal dopant concentration increases. High metal doping concentration inhibits the growth of E. coli. Ba-doped zinc oxide nanoparticles have high anti-bacterial activity than Mg-doped nanoparticles.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction The low-dimensional semiconductors show size-dependent structural, optical, electrical and magnetic properties due to its quantum confinement. Recent developments in nanotechnology and material science are key tools to study its properties. Among all the semiconductors, wide bandgap semiconductors which have potential applications in optoelectronic devices have been obtained more attention. ZnO is a wide bandgap semiconductor with the direct bandgap of 3.37 eV at room temperature, the binding energy of 60 meV (which is greater than thermal energy at room temperature), the refractive index of 2, the electron mobility of 50–60 cm2V-1 s-1,
large piezo-electric constants, lattice spacing a = 0.325 nm and c = 0.521 nm, abundant in nature, chemically stable and non-toxic [1–7]. Low-dimensional ZnO, where the charge carrier is confined in at least any one of the directions, have potential applications includes, but not limited to, gas sensors (H2O2, NH3, O3, H2S, NO2, CO, CO2, LPG), transistors, field emission display, white light emission, UV absorber, solar cell, anti-bacterial activity, semiconductor memory and batteries.[8–23]. Features of ZnO depend on the defects of the materials such as oxygen vacancies. The addition of the impurity in ZnO with different doping concentrations is the simplest way to vary the properties of ZnO considerably and this induces more research
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https://doi.org/10.1007/s10854-020-04546-6
J Mater Sci: Mater Electron
about ZnO till now [24–27]. In literature, synthesis methods and its characterization are available for Co, Fe, Ge, Y, Al, Mn, Cr, Cu, Na, Mg, B, Ge, and Audoped ZnO [4, 21, 28–
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