Temperature impact on reliability of power RF devices under S-band pulsed-RF test
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Temperature impact on reliability of power RF devices under S‑band pulsed‑RF test M. A. Belaid1,2 · M. Tlig1 Received: 10 October 2019 / Accepted: 7 April 2020 / Published online: 20 April 2020 © Springer Nature Switzerland AG 2020
Abstract This paper presents an innovative reliability bench of aging life tests designed to high power RF applications for device lifetime under pulse conditions. The temperature effect on the parameters of power RF LDMOS (Radio Frequency Laterally Diffused-Metal–Oxide–Semiconductor) devices is highlighted. Indeed, the acceleration of the degradation mechanisms is related, directly or indirectly, to the temperature variation. The tests carried out on the power amplifier will be "Life-test RF" type (accelerated aging under constant constraints) over a period of 1500 h to quantify the drifts of the parameters measured (mainly P OUT and IDSS) under reliability bench life-test at different temperatures. The parameters of devices have been characterized i.e. static, dynamic and RF before and after testing. This allows us to quantify the degradation, of the shift, of a certain number of electrical quantities ( V TH, GM, RDSON, CRSS, etc.). The analysis of the physical results has been presented (simulator 2D ATLAS-SILVACO) to explain and observe the physical review of temperature impacts on power RF LDMOS performance. Finally, initial impacts analysis have been discussed. Keywords Reliability · Power RF transistor · Temperature effects · Hot carrier
1 Introduction The huge demand for high performance costs and high effective gives LDMOSFET devices an important place [1]. They have good performances than bipolar and GaAs transistors [1, 2]. Currently, the power RF LDMOS are used in several areas especially on base stations, TV broadcast and in radar systems with high capabilities particularly in terms of output power and Power Added Efficiency (PAE) [3, 4]. Metal Oxide Field Effect Transistors (MOSFETs) are the smost used devices in higher power RF field [3]. They are distinguished many advantages relative to bipolar devices, such as in particular [4, 5]; better linearity, with intermodulation products of smaller amplitude, and these are devices that are better from thermal runaway [1, 6].
The cost of MOSFETs represents a clear advantage over III–V technologies for application rates up to around 4 GHz. Recently, the characterization, optimization, and reliability of LDMOS devices have drawn much attention [2, 4]. For this purpose, we designed and implemented an innovative reliability bench able to keep monitoring of RF powers, voltages and device basic temperatures where the values correspond to the constraint operating conditions [5, 7, 8]. The duty cycle and pulse length have steadily increased to improve radar performance, from the accession of solid-state power modules in radar system [5]. These important needs for operation have increased the amount of constraint applied to devices and have a direct impact on their lifetime. A study knowledge of temperature impact is important
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