Upcoming Conference
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ECS Inaugurates Symposium on the Chemistry of Vapor-Phase Materials Synthesis The Electrochemical Society is inaugurating a symposium entitled "Fundamental Gas-Phase and Surface Chemistry of VaporPhase Materials Synthesis," the first of which will be held at the Society's Fall Meeting November 1-6,1998 in Boston. The Symposium, chaired by T.J. Mountziaris (State University of New York—Buffalo), is endorsed by both the Materials Research Society and EUROCVD. The venue for the conference is the Sheraton Boston Hotel and Towers. The deadline for submission of abstracts is June 1,1998. This Symposium will address the stateof-the-art in vapor-phase synthesis and processing of materials with emphasis on gas-phase and surface chemistry and its effects on growth/etching rates and material properties. Topics will include chemical vapor deposition (such as thermal, rapid thermal, plasma-assisted, photonassisted, ion-assisted, and particle-assisted), vapor-phase etching, molecular- and chemical-beam epitaxy, and aerosol synthesis. Both oral and poster presentations will be included. Papers are sought in the following areas: kinetics of gas-phase and surface reactions underlying the vapor-phase processing of materials, including fundamental mea-
surements of kinetic constants as well as in situ probing during film growth /etching and particle synthesis; surface and interfacial chemistry during heteroepitaxy and selective epitaxy; new precursors and growth/etching chemistries; quantumchemistry calculations for predicting thermochemistry, mechanisms, and rate parameters; in situ monitoring and control of materials composition, morphology, electrical, and optical properties; fundamentals and in situ monitoring of gas-toparticle conversion; particle formation issues during CVD; and models describing the kinetics and transport phenomena that occur during vapor-phase materials processing, with special emphasis on hierarchical models leading from the molecular to the mesoscopic level (properties) and from the mesoscopic to the macroscopic level (processes). Invited speakers include R.W. Carr (Minnesota University) whose talk is entitled, "Gas Phase Chemistry in Chemical Vapor Deposition"; S.L. Girshick (Minnesota University), "Numerical Model of GasPhase Nucleation and Particle Growth During CVD of Silicon"; J.R. Creighton (Sandia National Laboratories), "Surface Stoichiometry, Structure, and Kinetics of
GaAs MOCVD"; M.S. Gordon (Iowa State University), "Potential Energy Surfaces: From the Gas Phase to Surface Chemistry"; R.G. Gordon (Harvard University), "Liquid Precursors for CVD of Metals and Oxides"; R.F. Hicks (University of California—Los Angeles), "Atomic Structure of Compound Semiconductor Surfaces in the MOVPE Environment"; M.L. Hitchman (University of Strathclyde), "Analysis of CVD Processes"; D. Maroudas (UC—Santa Barbara), "Atomic-Scale Modeling of Plasma-Surface Interactions in the PECVD of Silicon"; and P.R. Westmoreland (University of Massachusetts), "Experimental Gas-Phase Kinetics for Parallel-Plate PECVD." For ins
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