Upcoming Conference
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International Conference on
Ageing Studies and Lifetime Extension of Materials 12 - 14th July 1999 St. Catherine's College, Oxford, UK Organised By: AWE/Hunting BRAE
Topics and themes The meeting will address changes in the properties of materials in-service with time: methods of study, interpretation of data, theoretical modelling, lifetime prediction and extension. A wide range of materials, including polymers, metals, glasses, ceramics, explosives, nuclear and structural materials, will be covered. Session themes will include: observation and understanding of real time and accelerated ageing; experimental techniques; modelling and theoretical studies; lifetime prediction and validation; lifetime extension; material design for ageing. This conference will bring together scientists and engineers from around the world who wish to understand material and system ageing processes and how they can be studied and predicted. Contributed papers and posters Persons wishing to contribute either an oral or a poster presentation should send a one page abstract with a title, stating whether oral or poster, to the Organising Chairman at the address below. Abstract Deadline: 31st March 1999 For further information, contact (preferably by e-mail): Dr. Les Mallinson International Conference on Ageing Studies and Lifetime Extension of Materials AWE Aldermaston Reading RG7 4PR United Kingdom Telephone: Fax: E-mail:
+44(0)118 9827993 +44(0)118 9824739 [email protected]
Microscopy of Semiconducting Materials Conference to be Held in March 1999 The 11th international conference on Microscopy of Semiconducting Materials will be held at Oxford University on March 22-25,1999. The conference will focus on the latest developments in the study of the structural and electrical properties of semiconductors by the application of transmission and scanning electron microscopy, scanning probe microscopy, and x-raybased methods. Conference sessions will concentrate on state-of-the-art studies in high-resolution imaging and analytical electron microscopy, scanning probe microscopy, epitaxial layers including III-V nitrides, quantum wells, wires and dots, dislocation structure, metal-semiconductor contacts and silicides, and the effects of device processing treatments. Invited speakers include H. Bender (IMEC, Leuven) on "Focused Ion Beam Preparation for TEM Studies of ULSI Devices"; J.C. Bravman (Stanford University), "In Situ Microscopy for Electromigration Studies"; H. Cerva (Siemens Research Laboratories, Munich), "TEM for Process Development of Silicon Devices"; R.F. Davis (North Carolina State University), "Conventional, Selective and Lateral Growth of GaN Thin Films and Their Characterization"; P.F. Fewster (Philips Research Laboratories, Redhill), "X-Ray Diffraction Tools and Methods for Semiconductor Analysis"; E.A. Fitzgerald (Massachusetts Institute of Technology), "Dislocations in Relaxed Composition-Graded Buffer Layers"; Y. Homma (NTT Basic Research Laboratories, Kanagawa), "In Situ Scanning Electron Microscopy of Epitaxial Proce
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