Upcoming Conference
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10th International Conference on Microscopy of Semiconducting Materials Celebrates Centennial Discovery of the Electron The tenth in the series of biennial conferences on Microscopy of Semiconducting Materials will be held at Oxford University on April 7-10, 1997. The conference takes place on the centenary of the discovery of the electron and will celebrate this with a special symposium in which world experts will review the accumulated achievements in the areas of semiconductor science and technology and electron beam instrumentation and techniques. The conference will focus on the latest developments in the study of structural and electrical properties of semiconductors by the application of transmission and scanning electron microscopy. Recent advances in the use of other microcharacterization techniques such as x-ray topography, scanning probe microscopy, and atom probe microanalysis will also be featured. The materials of interest cover the range of elemental and compound semiconductors. The state-of-the-art in a number of subject areas will be addressed, including the
characterization of as-grown semiconductors in both bulk and thin film forms, the study of lattice defect and impurity behavior, and the investigation of the effects of advanced semiconductor processing procedures. Special sessions will concentrate on recent developments in high resolution electron microscopy, scanning probe microscopy, the properties of dislocations, the characteristics of epitaxial layers, quantum wells, wires and dots, the nature of metal-semiconductor contacts and silicides, and the effects of device processing treatments. Invited speakers provisionally include P.J. Goodhew (Liverpool University) "Strained Layer Dislocation Behavior"; D.C. Houghton (NRC, Ottawa) "Strained Layer Devices"; D.E. Jesson (Oak Ridge National Laboratory) "Semiconductor Growth Instabilities"; J.C.H. Spence (Arizona State University, Phoenix) "Dislocation Kink Behavior"; H.P. Strunk (Erlangen University) "Heteroepitaxial Self-Organization"; S.
Takeda (Osaka University) "HRTEM of Defects in Si and Ge"; R.T. Tung (Bell Labs, Murray Hill) "Silicides for ULSI Devices"; J. Vanhellemont (IMEC, Leuven) "TEM of Processed Si"; and P.R. Wilshaw (Oxford University) "Advances in SEM-EBIC." Conference proceedings will be published. For further details, contact conference Co-Chair Prof. A.G. Cullis, Dept. of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield SI 3JD, UK (+44-114-282-5407; fax +44-114272-6391; e-mail a.g.cullis® sheffield.ac.uk). Information about abstract submission (deadline December 2,1996) and registration can be obtained from The Administrator, The Royal Microscopical Society, 37/38 St. Clements, Oxford OX4 lAJ, UK (+44-1865-248768; fax: +44-1865-791237; e-mail: [email protected]). The conference is sponsored by the Royal Microscopical Society and The UK Institute of Physics, with endorsement by the Materials Research Society. •
CALL FOR ABSTRACTS 4th International Workshop on Measurement, Characterizati
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