Morphological and electrical study of porous TiO 2 films with various concentrations of Pluronic F-127 additive
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Morphological and electrical study of porous TiO2 films with various concentrations of Pluronic F‑127 additive S. Roy1 · S. P. Ghosh2 · D. Pradhan2 · P. K. Sahu1 · J. P. Kar2 Accepted: 8 September 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Porous TiO2 thin films were synthesized by dip-coating method on silicon substrates. Pluronic F-127 (F127), a structuredirecting agent, was used to promote the evolution of pores during the synthesis of TiO2 thin films. The concentration of F127 was varied from 0.3 to 3.75 mM. FESEM micrograph has confirmed the presence of porous morphology, whereas XRD and Raman studies have revealed the formation of the anatase phase of the sample. Capacitance–voltage (C–V) measurement was carried out using TiO2 based metal oxide semiconductor (MOS) capacitor structure, where F127 was incorporated in the oxide layer. The oxide charge density was found to be increased with the concentration of F127 co-polymer. Interface trap density has a maximum value of 6.6 × 1012 eV−1 cm−2 after the addition of 3 mM of F127. It was found out that the 3 mM of F127 has better memory effect during the resistive switching study. Keywords Pluronic F-127 · Porous · Dip-coating · FESEM · Resistive switching
1 Introduction TiO2 is a group IV compound of the periodic table. In recent years, TiO2 thin film has drawn considerable attention due to its unique properties such as highly photostable, high charge mobility, high refractive index (≤ 2.55–2.9), high dielectric constant, cost efficient, easy of synthesis, and non-toxic nature [1–3]. Furthermore, well controlled porous titania films have drawn enough attention due to higher surface-tovolume ratio due to the distributions of small-sized pores on the surface, which provides more active area in order to improve the efficiency of electronic interaction. Therefore, porous TiO2 thin film has been actively considered as gas sensors [4–8], solar cells [9], photo catalysts [10–13]. Furthermore, ordered porous structures have several advantages such as, huge surface area, higher stability and reproducibility [14]. Now-a-days, T iO2 has been widely investigated with memory devices fabrication because pure T iO2 is a good semiconductor with bandgap of 3–3.2 eV. During external * J. P. Kar [email protected] 1
Department of Electrical Engineering, National Institute of Technology, Rourkela 769008, India
Department of Physics and Astronomy, National Institute of Technology, Rourkela 769008, India
2
excitement, oxygen atoms of T iO2 are forced to drive out and create oxygen vacancies in the lattice of T iO2. The oxygen vacancy has led to vary the resistivity of the materials significantly [15, 16]. Memory switching phenomenon is dependent on the surface area [17, 18]. Therefore, it is expected that the introduction of porous structure will significantly affect the resistive memory switching property. The porous structure can help to increase the effective surface area and hence, the generation of oxygen vacancies
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