Process Integration
Today, a wide variety of transistor circuits is available in integrated form, discrete transistors are employed only if an appropriate integrated circuit, is not available or if the transistor properties required are not compatible with integrated circuit
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ADVANCED MICROELECTRONICS
11
Springer-Verlag Berlin Heidelberg GmbH
Engineering
ONLINE LlBRARY
http://www.springer.de/engine/
M. Reisch
High-Frequency Bipolar Transistors Physics, Modeling, Applications
With 330 Figures
Springer
Series Editors: Dr. Kiyoo Itoh
Professor Takayasu Sakurai
Hitachi LTD. Central Research Laboratory 1-280 Higashi-Koigakubo Kokubunji-shi Tokyo 185-8601 Japan
Center for Collaborative Research University of Tokyo 7-22-1 Roppongi, Minato-ku Tokyo 106-8558 Japan
Author: Professor Dr. Michael Reisch University of Applied Sciences FH Kempten Bahnhofstrage 61-63 87435 Kemptenl AlIgău
Germany E-mail: [email protected]
ISBN 978-3-642-63205-1 ISBN 978-3-642-55900-6 (eBook) DOI 10.1007/978-3-642-55900-6 Cataloging-in-Publication Data applied for Bibliographic information published by Die Deutsche Bibliothek. Die Deutsche Bibliothek lists this publication in the Deutsche Nationalbibliografie; detailed bibliographic data is available in the Internet at . This work is subject to copyright. AII rights are reserved, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilm or in other ways, and storage in data banks. Duplication of this publication or parts thereofis permitted only under the provisions of the German Copyright Law of September 9, 1965, in its current version, and permis sion for use must always be obtained from Springer-Verlag. Violations are liable for prosecution act under German Copyright Law. http://www.springer.de © Springer-Veriag Berlin Heidelberg 2003 Originally published by Springer-Verlag Berlin Heidelberg New York in 2003
Softcover reprint ofthe hardcover lst edition 2003 The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. Typesetting: Camera ready by authors Cover-design: design & production, Heidelberg 62/3020 hu - 5 4 3 2 1 o Printed on acid-free paper
Preface This book provides a rather comprehensive presentation of the physics and modeling of high-frequency bipolar transistors with particular emphasis given to silicon-based devices. I hope it will be found useful by those who do as well as by those who intend to work in the field, as it compiles and extends material presented in numerous publications in a coherent fashion. I've worked on this project for years and did my best to avoid errors. Despite all efforts it is possible that "something" has been overlooked during copy-editing and proof-reading. If you find a mistake please let me know.
Michael Reisch Kempten, December 2002
Notation It is intended here to use the most widely employed notation, in cases where the standard textbook notation is different from the SPICE notation, the latter is used. In order to make formulas more readable, model parameters repr
