A detailed study on the growth of silicon nanowires by hot wire chemical vapor process: concept of critical size of Sn c
- PDF / 8,180,061 Bytes
- 15 Pages / 547.087 x 737.008 pts Page_size
- 82 Downloads / 139 Views
RESEARCH PAPER
A detailed study on the growth of silicon nanowires by hot wire chemical vapor process: concept of critical size of Sn catalyst Ankur Soam & Nitin Arya & Rajiv Dusane
Received: 4 March 2020 / Accepted: 16 November 2020 # Springer Nature B.V. 2020
Abstract The size of silicon nanowires (SiNWs) plays an important role for their application in nanoelectronic and nanophotonic systems. Therefore, it is of great interest to study the synthesis conditions of SiNWs in order to grow SiNWs with well-controlled manner to be integrated into a device. This paper includes a systematic study of the dependence of diameter and length of the SiNWs on the growth conditions. SiNWs were synthesized via vapor–liquid–solid (VLS) mechanism using a catalyst film of Sn nanoparticles on stainless steel (SS) substrate. The morphology and microstructure of SiNWs synthesized at different parameters were investigated with scanning electron microscopy and Raman spectroscopy. In this study, we have observed that there exists a minimum size of the catalyst to initiate the growth of SiNWs for a given set of process parameters. Furthermore, this work also addresses the difficulties associated with the growth of long SiNWs. Effect of filament temperature on the morphology of SiNWs has also been studied. It is observed that their dimensions and geometrical orientation are greatly influenced by the filament temperature. At filament temperatures between 1400 and 1600 °C, short SiNWs with random A. Soam (*) : N. Arya : R. Dusane Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, India e-mail: [email protected] A. Soam Department of Mechanical Engineering, Siksha O Anusandhan University, Bhubaneswar, Odisha 751030, India
distributions are observed. Long and vertical SiNWs are found if the filament temperature was raised to 1800–1950 °C. Keywords Sn nanoparticles . Silicon nanowires . Hot wire CVP . Critical size . Filament temperature . Nanostructured catalysts
Introduction SiNWs compatible with existing micro fabrication process are expected to be used in next-generation nanoscale electronic and photovoltaic devices (Cui et al. 2003; Dong et al. 2008; Hochbaum et al. 2008; Tian et al. 2007; Choi et al. 2010; Soam et al. 2019). The physical and chemical properties of SiNWs are dependent on their morphology; hence it is necessary to control their morphology to fabricate high-quality devices. Ongoing advanced development of electronic devices needs a controlled fabrication of SiNWs. SiNWs’ electrical properties can be modified in a predictable manner during the growth which makes them more attractive for future nano-electronic devices. Moreover, their large surface-to-volume ratio offers distinct structural and chemical properties. SiNWs are synthesized using two processes: (1) metal-catalyzed nanowire growth (bottom up approach) and (2) metal induced chemical etching (top down approach). The fast growth rate c
Data Loading...
