Abstracts of MRS Internet Journal of Nitride Semiconductor Research, Volume 1, Articles 35-38
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M Internet Journal
Nitride of Semiconductor Research
An electronic, peer-reviewed journal published by the Materials Research Society. http://nsr.mij.mrs.org/
Volume 1, Articles 35-38
Editors-in-Chief: S. Strite, Cammy R. Abernathy [email protected] http://nsr.mij.mrs.org/1 / 3 5 / Optical Properties of Nitride-Based Structures Grown on 6H-SiC D.V. Tsvetkov12, A.S. ZubrilovL2, V.I. Nikolaev2, V. Soloviev2, and V.A. Dmitriev2 1 Cree Research EED 2 loffe Physical-Technical Institute The luminescent properties of AIGaN epitaxial layers with AIN mole fractions up to 30% and various types of AIGaN/GaN-based heterostructures have been studied. The structures were grown on 6H-SiC substrates by MOCVD [metalaganic chemical vapor deposition]. The structures' cathodoluminescence and electroluminescence were measured. A "blue" shift of the edge luminescent peak position for AIGaN alloys was measured to be a nonlinear function on the AIN mole fraction. For/>AlGaN//>GaN double heterostructures (DH), the edge peak position was detected at 365 nm (300 K). For a p-AI0.osGao^sN/ nAI0.036a0.97N heterostructure, the electroluminescent edge peak was observed at 355 nm (300 K). The effects of temperature and forward current on the edge electroluminescence of the AIGaN/GaN DHs were investigated. OnJer No. NS001-035 ©1996 MRS http://nsr.mij.mrs.0rg/1 / 3 6 / High Resistivity Mfia,J* Layers Grown by MOCVD A.Y. Polyakovi, M. Shin1, D.W. Greve1, M. SkowronskP, and R.G. Wilson2 1 Carnegie Mellon University 2 Hughes Research Laboratory Undoped AI^Ga^JM layers with good surface morphology and very low electron concentration have been grown by MOCVD [metalorganic chemical vapor deposition] on sapphire substrates. The observed electrical and optical properties depend strongly on the growth temperature. Layers grown at 1000°C exhibited low resistivity and strong optical absorption below the bandgap. In contrast, layers grown at 1050°C had low carrier concentrations and good mobilities. Virtually no optical absorption near the band edge was observed as opposed to the usual situation in Al^a^JM. The electrical properties of these layers can be explained by the presence of donor centers whose energy increases with composition, and deeper lying compensating defects. The interaction of these centers renders the samples with x < 0.2 highly resistive, with room temperature resistivity higher than 106 ohm-cm. SIMS data strongly suggest that the electrically active centers in our AIGaN layers are native defect-related. Implantation of Si ions into AI0.12Gao.8sN, and subsequent annealing at 1140°C resulted in layers with electron concentration of 4.6 x 1017 cm 3 . Order No. NS001-036 ©1996 MRS
MIJ-NSR Abstracts
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http://nsr.mij.mrs.org/1 /37/ Radiative Lifetime of Excitons in GalnN/GaN Quantum-Wells Jin Seo Im, Volker Harle, Ferdinand Scholz, and Andreas Hangleiter Universitat Stuttgart We have studied GalnN/GaN quantum-well structures grown by LPMOVPE [metal-organic vapor-phase epitaxy]
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