Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and
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MRS Advances © 2020 Materials Research Society DOI: 10.1557/adv.2020.273
Chromatic and Panchromatic Nonlinear Optoelectronic cmosfets for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication James N. Pan Advanced Enterprise and License Company (AELC), Linthicum, Maryland 21090, USA
Email: [email protected]
Abstract
Traditionally, CMOS transistors are for low power, high speed, and high packing density applications. CMOS is also commonly used as power regulating devices, and light sensors (CCD or CMOS image sensors). In this paper, we would like to introduce Photonic CMOS as a light emitting device for optical computing, ASIC, power transistors, and ultra large scale integration (ULSI). A Photonic CMOS Field Effect Transistor is fabricated with a low-resistance laser or LED in the drain region, and multiple photon sensors in the channel / well regions. The MOSFET, laser, and photon sensors are fabricated as one integral transistor. With embedded nonlinear optical films, the Photonic CMOSFETs have the capability of detecting and generating focused laser beams of various frequencies to perform optical computing, signal modulation, polarization, and multiplexing for digital / analog processing and communication.
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INTRODUCTION A Photonic CMOS Field Effect Transistor [1] – [2] includes a low-resistance laser [3] – [4] or LED fabricated in the MOSFET drain region, and multiple photon sensors or Avalanche Photo Diodes (APD) in the channel / well regions. The MOSFET, laser, and APD's are fabricated as one integral transistor. When a voltage is applied to the gate and a voltage is applied to the drain, both MOSFET and laser are turned on. Light emitted from laser is absorbed by the APD to cause an avalanche breakdown. The high breakdown current flows into the drain to be a high output current. When the MOSFET is off, both laser and APD are switched off. Very low forward voltage tunnelling lasers and quantum dots lasers (VF = 0V) have been reported [3]. With modulation doped junctions, and advanced low temperature selective epitaxy process (III-V or II-VI direct bandgap semiconductors on silicon), these very low resistance lasers or LEDs are suitable for being fabricated in the drain of the Photonic CMOSFETs. Photonic CMOSFETs not only generates an internal laser light, but also can be used as an external light detector or image sensor. The internal and external lights may be of the same or various different frequencies. In the former case, it is defined as Chromatic Photonic CMOS. In the latter case, it is defined as Panchromatic Photonic CMOS. The photon sensor, or avalanche photo diode in the Chromatic Photonic CMOSFETs is designed to absorb lights from a specified range of light spectrum. Narrow bandgap semiconductors, or wide bandgap semiconductors can be used to
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