Electrostatic Investigation of Intended Source Drain Ultra Thin Body FD-SOI MOSFET
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ORIGINAL PAPER
Electrostatic Investigation of Intended Source Drain Ultra Thin Body FD-SOI MOSFET Vimal Kumar Mishra 1
&
Nitu Rao 1
Received: 4 October 2019 / Accepted: 2 January 2020 # Springer Nature B.V. 2020
Abstract In this paper, the proposed modified source and modified drain fully depleted silicon-on-insulator metal oxide semiconductor field effect transistor (FD-SOI MOSFET) presents better electrical performance as compared to the developed channel FD-SOI MOSFET with electric field modulation (DC-EFM FD-SOI MOSFET) Anvarifard MK, Orouji AA (IEEE Trans Electron Devices 65:1653–1657, 2018). Furthermore, the optimized modified source (MS), modified drain (MD) and modified source and drain (MS-MD) ultra-thin body (UTB) FD-SOI structure is also studied. The analysis and simulation has completed in regard to electrical parameter like threshold voltage, subthreshold slope, leakage current, on current to off current ratio (Ion/Ioff), substrate potential, and electric field distribution. By application of a low doping source profile underneath the high doping source profile in modified drain (MD) FD-SOI MOSFET shows improved sub-threshold slope, least leakage current, higher electric field inside drain area and approximately equal electric field peak at drain channel interfaces. Analyses also presents optimized modified source-drain (MS-MD) UTB FD-SOI MOSFET have least source to drain and approximately equal gate to drain capacitance of modified drain (MD) FD-SOI MOSFET. Moreover, simulation of modified-source (MS) FD-SOI shows best result with respect to higher surface potential and higher electron mobility. This comparison depicts that modified source-drain (MS-MD) UTB FDSOI MOSFET is found to be compatible with analog as well as digital application. Keywords Electric-field . Surface potential . Ion to Ioff current ratio . Sub- threshold slope . Trans-conductance . Parasitic capacitances
1 Introduction Today there is continuous evolution in electronic, information and communication technology in order to meet human being requirement such as least cast and faster speed of portable devices. These requirements are possible because of continuous progress in semiconductor MOS technology. The important properties like faster switching, low power dissipation high input resistance, low output resistance of MOS transistor have made main component of integrated circuits (ICs) [1]. Today’s integrated circuits (ICs) are strongly developing due to dependency of portable device, computer, microcontroller, satellite and many other devices on integrated circuits [2]. In
* Vimal Kumar Mishra [email protected] 1
Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Noida, U.P. 201301, India
order to extend Moore’s law prediction metal oxide semiconductor field effect transistor (MOSFET) has been continuously investigated and miniaturizes its dimension by different researchers [3]. With continuous scaling of dimension leads to certain serious problem like short channel
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