Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study
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Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study Tomohiko Takeuchi1, Suzuka Nishimura2, Tomoyuki Sakuma1, Satoru Matsumoto1, Kazutaka Terashima2 1 Department of Electronics and Electrical Engineering, Keio University 3-14-1 Hiyoshi, Kohoku, Yokohama 223-8522, Japan 2 Department of Materials Science and Technology, Shonan Institute of Technology 1-1-25 Tsujido-Nishikaigan, Fujisawa, Kanagawa 251-8511, Japan ABSTRACT Boronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2µm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm-3(on n-Si) and 63cm2/Vs and 1.9× 1019cm-3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE. INTRODUCTION Recently, growth of GaN semiconductor on the Si substrate has been very important to demonstrate the feasibility of high speed and high power devices such as blue LEDs and FETs[1,2]. Particularly, the growth of zinc-blende structure GaN (c-GaN) has attracted considerable interest [3-5] because of the advantages of good thermal stability, high mobility and clear cleavage in c-GaN compared with wurtzite structure-GaN (w-GaN) for the device applications [6,7]. Boronmonophosphide(BP) is one of the III-V semiconductors having the zinc-blende structure, indirect transition and 2.0eV band gap. BP and c-GaN have the same crystal structures and the lattice mismatch between them is as small as 0.6%, which is remarkably smaller compared with GaAs (about 20%) and 3C-SiC (about 3.3%). This is the main reason for choosing BP as the substrate of c-GaN growth [8,9]. Moreover, BP is very chemically stable and hard as high as 3200 kg/cm2 in Knoop gauge [10]. In this paper, the growth and evaluation of BP single crystal on the Si(100) substrate of 2
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inch in diameter have been investigated. The BP films have been characterized in terms of Hall effect measurement, SEM, TEM and x-ray diffraction. Then, the successful growth of c-GaN on this BP/Si(100) substrate by RF-MBE has been reported. EXPERIMENTAL BP was grown on Si(100) substrate of 2 inch in diameter with low pressure MOCVD (EMCORE Corp.) system using TEB(Triethylboron) and TBP(Tertiarybutylphosphine) as MO-sources. Both of p- and n-type Si(100) wafers with resitivity of 0.01-0.1Ohm
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