Nanostructural and Electrical Properties of Al/Sn/La 2 O 3 Nanocomposite as a Gate Dielectric of MOSFETs
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RESEARCH ARTICLE
Nanostructural and Electrical Properties of Al/Sn/La2O3 Nanocomposite as a Gate Dielectric of MOSFETs Masoud Ebrahimzadeh1 • Mehrnoush Nakhaei1 • Mansoure Padam1 Ali Bahari1
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Received: 24 August 2017 / Revised: 15 April 2019 / Accepted: 11 July 2019 The National Academy of Sciences, India 2019
Abstract Metal–oxide–semiconductor field-effect transistors (MOSFETs) have significant role on producing the electronic devices. The producers try to make the chips in smaller size so they need materials with high dielectric constant. Here, in this research, Al/Sn/La2O3 will introduce as a material with higher dielectric constant and less defections. In this research, Al/Sn/La2O3 nanostructure was prepared by sol–gel and spin-coating methods. Lanthanum chloride (LaCl37H2O), cetyltrimethylammonium bromide, ammonia (25%), aluminum tri-sec-butylate (C12H27AlO3), acetyl acetone (C2H5O8), isopropyl alcohol (C3H8O), Tin (II) chloride (SnCl2) and H2O were used to synthesize Al/ Sn/La2O3. Structural properties and surface morphology of nanocrystallites were investigated by X-ray diffraction, differential scanning calorimetry, scanning electron microscopy, atomic force microscopy and Fourier-transform infrared radiation, respectively. Electrical properties were determined with metal–dielectric–semiconductor through capacitance–voltage (C–V), the hysteresis curve and current density–voltage (J–V). The conduction mechanism was measured in the temperature range of 330 K \ T \ 410 K and in the electrical -1 field \ 0.12 MV cm , and the results showed ohmic emission. A thermal excited model was proposed to explain the mechanism of ohmic conduction current. The highest value of dielectric constant (k) for Al/Sn/La2O3 structure was 33 at T = 250 C with almost amorphous structure. on The result showed that IIoff of Al/Sn/La2O3 structure was * 1.3. The leakage current and capacitance–voltage of Al/ & Masoud Ebrahimzadeh [email protected] 1
Department of Solid State Physics, University of Mazandaran, Babolsar, Iran
Sn/La2O3 nanocomposite for the sample calcined at T = 250 C showed that this sample can be good enough for using as a gate dielectric of MOSFETs. Keywords Sol–gel method MOSFET Gate dielectric Al/Sn/La2O3 nanostructure
1 Introduction The metal–oxide–semiconductor field-effect transistors (MOSFETs) have an important role on ultra-large-scale integration (ULSI) that is used in electric products, for example: personal computers, digital cameras and mobile phones [1]. Geometrical size of MOSFETs with high kdielectric constant has an important role on processing the speed and electrical power dissipation [2]. Gate dielectric has major role to the MOSFETs performance [3]. Now, silicon dioxide (SiO2) with a few atomic layers thick is used in MOSFETs as a gate dielectric [4]. In recent years, high leakage currents and tunneling currents, high power dissipation and boron diffusion become critical issues of SiO2 gate dielectric. Minimizing the size of MOSFETs can solve these issues [4]. Lately, ma
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