Scanning Near-Field Microwave Probe for In-line Metrology of Low-K Dielectrics
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Scanning Near-Field Microwave Probe for In-line Metrology of Low-K Dielectrics Vladimir V. Talanov, Robert L. Moreland, André Scherz, Andrew R. Schwartz, and Youfan Liu1 Neocera, Inc., 10000 Virginia Manor Road, Beltsville, MD 20705 USA 1 Intel Assignee, International Sematech, Austin, TX 78741 USA ABSTRACT We have developed a novel microwave near-field scanning probe technique for non-contact measurement of the dielectric constant of low-k films. The technique is non-destructive, noninvasive and can be used on both porous and non-porous dielectrics without any sample preparation. The probe has a few-micron spot size, which makes the technique well suited for real time low-k metrology on production wafers. For dielectrics with k
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