Sensitivity and sensing speed analysis of extended nano-cavity and source over electrode in Si/SiGe based TFET biosensor
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Sensitivity and sensing speed analysis of extended nano‑cavity and source over electrode in Si/SiGe based TFET biosensor Anil Lodhi1 · Chithraja Rajan1 · Amit Kumar Behera1 · Dip Prakash Samajdar1 · Deepak Soni1 · Dharmendra Singh Yadav2 Received: 11 June 2020 / Accepted: 19 September 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract In this manuscript, a new approach has been presented to enhance biosensor sensitivity and sensing speed by altering the mobility of charge carriers in the source region. The presented biosensor has been named as hetero material, source electrode tunnel FET, HM-SE-TFET. For comparison, we have considered P +(Source) N(Channel) N +(Drain) type architecture. In the proposed device, doped SiGe is used to enhance the mobility of charge carriers in the source region. Additionally, an extra negative biased source electrode is deposited over the source region, which overcomes the material solubility limit. The extra negative biased source electrode attracts the holes from bulk P + source which increases the abruptness at the sourcechannel interface. The increased abruptness at the junction increases the ON State driving current. Further, the cavity which was earlier under the gate electrode has been extended to the source region, which provides a large area to accommodate in the cavity and changes the electrostatic characteristics of the device. Hence the combined effect of hetero material (SiGe) in the source region and extension of cavity to the source region enhances the sensitivity and sensing speed of the biosensor. The effectiveness of the proposed biosensor has been compared with the conventional Si-based TFET biosensor in terms of drain current and device sensitivity. Keywords Cavity · Biosensing application · Hetero material · Dielectric · Charge density · Sensitivity · Biosensor
1 Introduction
* Anil Lodhi [email protected] Chithraja Rajan [email protected] Amit Kumar Behera [email protected] Dip Prakash Samajdar [email protected] Deepak Soni [email protected] Dharmendra Singh Yadav [email protected] 1
PDPM Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, Madhya Pradesh, India
National Institute of Technology, Hamirpur, Himachal Pradesh, India
2
With the discovery of label-based biosensor, ion-sensitive field effect transistor (ISFET) came into the picture in 1970 which became very popular for detecting charged biomolecule species. But soon its popularity fades away as it has a serious drawback of detecting only one category of biomolecule i.e.charged biomolecules while the neutral biomolecules are left undetected [1–5]. Then, the idea of a label-free biosensor came into existence in which bio-detection potentiality is integrated into established semiconductor technology. A cavity is created in the oxide region under the gate electrode of conventional MOSFET and when the biomolecule is placed in that cavity either dielectric constant changes or the charge density in the cavity changes
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