Low Power and Reliable SRAM Memory Cell and Array Design
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell des
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Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM Eishi Ibe and Kenichi Osada
Acronyms CHB CHBc CORIMS DRAM FPGA MBU MCBI MCU MNT PCSE SBU SEB SEFI SEGR SEL SER SESB
CHecker Board CHecker Board complement COsmic Radiation IMpact Simulator Dynamic random access memory Field programmable gate array Multi-bit upset Multi-coupled bipolar interaction Multi-cell upset Multi-node transient Power cycle soft-error Single bit upset Single event burnout Single event functional interruption Single event gate rupture Single event latchup Soft-error rate Single event snapback
E. Ibe () Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida, Totsuka, Yokohama, Kanagawa 244-0817, Japan e-mail: [email protected] K. Osada Measurement Systems Research Department, Central Research Laboratory, Hitachi Ltd., 1-280, Higashi-koigakubo, Kokubunji-shi, Tokyo 180-8601, Japan e-mail: [email protected] K. Ishibashi and K. Osada (eds.), Low Power and Reliable SRAM Memory Cell and Array Design, Springer Series in Advanced Microelectronics 31, DOI 10.1007/978-3-642-19568-6 6, © Springer-Verlag Berlin Heidelberg 2011
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SET SEU SRAM
E. Ibe and K. Osada
Single event transient Single event upset Static random access memory
Abstract In this chapter, current status of environmental radiation-induced failures in SRAM is introduced. Alpha ray-induced soft-error has been a major concern for soft-errors in memories until late 1980s. Threat from environmental neutroninduced soft-error is growing with a rapid pace from early 1990s as device scaling proceeds. General features in charge collection mode soft-errors are reviewed and analyzed based on simulation results from the Monte Carlo soft-error simulator CORIMS. Combining with conventional charge collection mechanisms causing soft-error in SRAMs, new bipolar error mechanisms are confirmed under highenergy neutron-accelerated tests. The error mode is initially referred as “battery effect” and then referred as multi-coupled bipolar interaction (MCBI), based on theoretical/simulation studies with 2- or 4-bit 3D SRAM models. Countermeasure combining error correction code (ECC) and interleave turned out to be robust against this novel error mode.
6.1 Fundamentals of SER in SRAM Cell When an energetic ionizing particle penetrates into a semiconductor device and pass through a depletion layer under a storage node (or diffusion layer), a single event effect (SEE) may take place. As electronic devices are exposed to the harsh radiation environment from galactic cosmic rays or solar flares, a wide variety of SEEs in semiconductor devices caused by protons or heavy ions have been investigated for space applications over many years [6.1]–[6.5]. SEEs due to terrestrial neutron have been also investigated in avionics application [6.6, 6.7]. Although SEEs at the ground due to both alpha ray and terrestrial neutron were pointed out in the late 1970s [6.8, 6.9], major researches and countermeasures have focused almost solely on alpha ray-in
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