Performance Improvement of Heterojunction Double Gate TFET with Gaussian Doping
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ORIGINAL PAPER
Performance Improvement of Heterojunction Double Gate TFET with Gaussian Doping Sasmita Sahoo 1 & Sidhartha Dash 1 & Soumya Ranjan Routray 2 & Guru Prasad Mishra 3 Received: 30 June 2020 / Accepted: 23 September 2020 # Springer Nature B.V. 2020
Abstract A new Ge/SiGe heterojunction double-gate tunnel field effect transistor (DGT) model with hetero dielectric gate and Gaussian doping drain region is investigated for the first time. The introduction of heterojunction with hetero dielectric will reduce band-toband tunneling (BTBT) leakage current while maintaining high mobility to enhance drain current and transconductance characteristics of the device significantly. Along with that, the combined effect of analytical drain doping profile (Gaussian) and hetero dielectric suppresses the ambipolar behavior. Different DC characteristics of the device like energy band analysis, electric field, drain current and BTBT generation rate are analyzed for the proposed structure. RF figure of merit for the HD-HJDGT-GD is express by analyzing its transconductance (gm), cut off frequency (fT), maximum oscillation frequency (fmax), gain bandwidth product (GBP) and transconductance frequency product (TFP). The outcome of the model under study is compared with conventional DGT. It is apparent from the analysis that the recommended model has better DC and RF performance, which makes this device worth studying to be used in high-frequency applications. TCAD simulation is performed by using Sentaurus 2D device simulator from Synopsys. Keywords Heterojunction . Hetero dielectric . Analytical doping (Gaussian) . Band to band tunneling (BTBT)
1 Introduction In recent times, continuous downscaling of device dimension leads the semiconductor industry into nanometer technology nodes. Leakage current and short channel effects (SCE) are two major concerns that introduce an imminent power crisis, as the supply voltage could not be scaled down further. Considering all details, TFET seems to be a promising alternative to replace bulk MOSFET because of its band to band tunneling (BTBT) mechanism [1–4]. TFET exhibits reduced short channel effect, lower temperature dependency, and lower leakage current in the reverse bias configuration [4–7].
* Guru Prasad Mishra [email protected] 1
Department of Electronics & Communication Engg., Institute of Technical Education & Research, Siksha ‘O’ Anusandhan Deemed to be University, Bhubaneswar 751030, India
2
Department of Electronics & Communication Engg., SRM Institute of Science and Technology, Kattankulathur, Chennai, India
3
Department of Electronics & Communication Engg., National Institute of Technology Raipur, Raipur, Chattisgarh, India
Regardless of all these advantages, TFET is dealing with some major issues that correspond to reduced drain current, ambipolar state conduction, and deficient high-frequency performance [8–11]. Many researchers have introduced several techniques such as gate overlapping on the drain region [12], using hetero gate dielectric [13], tunneling
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