Fabricaton Ofactive Devices and Logic Gates on Fibers
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H8.6.1
FABRICATON OF ACTIVE DEVICES AND LOGIC GATES ON FIBERS YongWoo Choi1, Ioannis Kymissis2, Annie Wang2 and Akintunde I. Akinwande1,2 1 Microsystems Technology Lab. (MTL), 2Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), 60 Vassar St. Cambridge, MA 02139 ABSTRACT Textiles are a suitable substrate for large area, flexible and wearable electronics because of their excellent flexibility, mechanical properties and low cost manufacturability. The ability to fabricate active devices on fiber is a key step for achieving large area and flexible electronic structures. We fabricated transistors and inverters with a-Si film and pentacene film on Kapton film and cut them into fibers. The a-Si TFT showed a threshold voltage of 8.5 V and on/off ratio of 103 at a drain voltage of 10 V. These are similar to the characteristics of a TFT fabricated on a glass substrate at the same time. The maximum gain of the inverter with an enhancement n-type load was 6.45 at a drain voltage of 10 V. The pentacene OTFT showed a threshold voltage of –8 V and on/off ratio of 103 at a drain voltage of -30 V. The inverter with a depletion p-type load showed a voltage inversion but the inversion occurred at the wrong voltage. The antifuse was successfully programmed with a voltage pulse and also a current pulse. The resistance decreased from 10 GΩ to 2 kΩ after the programming.
INTRODUCTION Flexible electronics has attracted a lot of attention because of its potential to form lightweight, rugged, bendable, and giant-area electronics using low-cost manufacturing. Textiles have excellent flexibility and mechanical properties, so that they are suitable as a flexible substrate. To make an electrotextile, first we should make active devices on fibers, second weave them to be textile, and finally interconnect the devices and conductors electrically. The process temperature for the device fabrication on fibers should be kept low. Amorphous silicon thin film transistors (a-Si TFTs) and organic thin film transistors (OTFTs) are good candidates for the electrotextile because of their low process temperature [1,2]. The use of the OTFTs also allows the formation of p-type transistors to form complementary structure with the a-Si TFTs [3]. The interconnect should be programmable. The antifuse can be programmed with a current pulse [4]. We fabricated transistors and inverters on Kapton films using the a-Si TFTs and pentacene OTFTs and the antifuse with a-Si film. In this presentation, we report the electrical
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H8.6.2
OPG
OPG
characteristics of the devices and antifuse.
Cr doped Si a-Si
Cr SiNx
EXPERIMENTAL DETAILS
Kapton film
The a-Si TFTs have a bottom-gate and back-channel etch structure. 50
µm thick Kapton film (HN type with Pentacene silicone
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