Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overc
- PDF / 5,018,843 Bytes
- 131 Pages / 439.37 x 666.142 pts Page_size
- 76 Downloads / 293 Views
The Springer Series in Advanced Microelectronics provides systematic information on all the topics relevant for the design, processing, and manufacturing of microelectronic devices. The books, each prepared by leading researchers or engineers in their fields, cover the basic and advanced aspects of topics such as wafer processing, materials, device design, device technologies, circuit design, VLSI implementation, and subsystem technology. The series forms a bridge between physics and engineering and the volumes will appeal to practicing engineers as well as research scientists.
Series Editors: Dr. Kiyoo Itoh Hitachi Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo Kokubunji-shi, Tokyo 185-8601, Japan Professor Thomas Lee Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, CIS-205 Stanford, CA 94305-4070, USA Professor Takayasu Sakurai Center for Collaborative Research, University of Tokyo, 7-22-1 Roppongi Minato-ku, Tokyo 106-8558, Japan Professor Willy M.C. Sansen ESAT-MICAS, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10 3001 Leuven, Belgium Professor Doris Schmitt-Landsiedel Lehrstuhl für Technische Elektronik, Technische Universität München, Theresienstrasse 90, Gebäude N3, 80290 München, Germany
For other titles published in this series, go to www.springer.com/series/4076
Michael Fulde
Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
Michael Fulde Infineon Technologies Austria AG Siemensstr. 2 9500 Villach Austria [email protected]
ISSN 1437-0387 ISBN 978-90-481-3279-9 e-ISBN 978-90-481-3280-5 DOI 10.1007/978-90-481-3280-5 Springer Dordrecht Heidelberg London New York Library of Congress Control Number: 2009939614 © Springer Science+Business Media B.V. 2010 No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without written permission from the Publisher, with the exception of any material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Cover design: eStudio Calamar S.L. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
Preface
The commercial success of semiconductor industry is mainly driven by the continuous scaling of CMOS and the proceeding functional integration in system on chip applications. Reaching the nanometer scale severe scaling limitations enforce the introduction of novel materials, device architectures and device concepts. Multigate FETs employing high-k gate dielectrics are considered as promising solution overcoming the scaling limitations of conventional planar bulk CMOS. Especially analog, mixed-signal and RF device and circuit performance is affected by these revolutionary changes in technology. This work provides a technology oriented assessment of analog and mixed-signal circuits in emerging multi-gate CMO
Data Loading...
