Gate Work Function Engineered Trigate MOSFET with a Dual-Material Bottom Gate for Biosensing Applications: a Dielectric-
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ORIGINAL PAPER
Gate Work Function Engineered Trigate MOSFET with a Dual-Material Bottom Gate for Biosensing Applications: a Dielectric-Modulation Based Approach Pritha Banerjee 1
&
Jayoti Das 1
Received: 8 July 2020 / Accepted: 3 November 2020 # Springer Nature B.V. 2020
Abstract Mathematical model development of a Dielectric-Modulated Dual Material Trigate MOSFET with a dual material bottom gate has been introduced for application as a biosensor for detection of biomolecules like enzymes, cell, DNA etc. With solution of 3D Poisson’s equation, electrical features of the proposed device have been acquired and corresponding shift in the device features due to change in permittivity, charge etc. by the biomolecules implies the type of biomolecule introduced in the nanogap. Further simulation results from Atlas corroborate the analytical results. Keywords Dielectric modulation . Biosensor . Short channel effects (SCEs) . Work function engineering . Trigate MOSFETs
1 Introduction In the contemporary era of technological renaissance, spectacular device features are accredited to the metrics of miniaturization, portability, cost effectiveness and improved speed. Escalated efficiency coupled with reduced power consumption can be achieved through device scaling that adds momentum to unimpeded device performances. However, aggressive downscaling limits the device performances due to severe Short channel effects that tends to weaken the reliability thereby degrading the device characteristics [1, 2]. Subjugating these reliability issues necessitate the incorporation of innovative technologies along with renovation of device architectures. Extensive researches to address the issues include implementation of Double Gate MOSFET to gain an enhanced gate control over the channel [3]. The advanced technology of gate work function engineering has also been considered in DG architectures to further ameliorate the device performances [4, 5]. However, in planar MOSFETs, gate dominance over the channel is constrained by restricted flow of electrons and hence exhibit poor immunity towards SCEs. Aggrandized * Pritha Banerjee [email protected] Jayoti Das [email protected] 1
Department of Physics, Jadavpur University, Kolkata, India
performance with subdued SCEs can be achieved with Intel introduced trigate MOSFETs having 37% speed enhancement and 50% power reduction compared to planar structures as promulgated in [6]. In the current research, a trigate MOSFET is considered with gate work function engineering paving the way for superlative device features and the device is explored to work as a Biosensor for label free detection of biomolecules. Bioelectronics has arisen as a nascent field embodying extensive gamut of advanced, prospective applications. FET-based Biosensors, which is one such application, are gaining prominence owing to their magnificent advantages such as direct transduction, miniaturization, higher sensitivity for label free detection of neutral (eg: proteins, enzymes etc.) and charged (such as DNA) biomolec
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