E-MRS Plans 1989 Spring Meeting, Issues Call for Papers
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E-MRS Plans 1989 Spring Meeting, Issues Call for Papers The 1989 Spring Meeting of the European Materials Research Society is scheduled for May 30-June 2 at the Council of Europe, Strasbourg, France. Five technical symposia are planned: Third International Symposium on Silicon MBE; Science and Technology of Defects in Silicon; Acoustic, Optical, Thermal Wave Characterization of Material; Beam Processing and Laser Chemistry; and Biomaterials. A course on High Tech Biomaterials in Hard Tissue Repair or Replacement will run parallel to the E-MRS Meeting. [See details in the November MRS BULLETIN, p. 64.] To obtain information about the meeting or to register, contact the Secretariat, Attention P. Siffert, Centre de Recherches Nucleases, Laboratoire Phase, F-67037 Strasbourg Cedex, France; telephone 88 28 65 43; fax 88 28 09 90; telex 890 032 CNRS CRO. Papers are being solicited for the 1989 EMRS Spring Meeting. The deadline for abstract submission is March 1, 1989. For additional details about symposium topics and abstract submission contact one of the symposium chairs listed below.
Third International Symposium on Silicon MBE This symposium will deal with singlecrystal growth, by molecular beam epitaxy, of materials compatible with silicon, their characterization, and device application. Submissions on surface physics and related vacuum synthesis the techniques such as solid phase and ion beam epitaxy are encouraged. Discussions will cover: • Homoepitaxy—preparation, characterization, alternative growth methods; • Doping—co-evaporation, implantation, solid phase MBE; • Heteroepitaxy—nucleation (including III/V on Si), mismatch accommodation, germanium silicon, silicides, insulators; • Quantum wells and superlattices— theory, properties, ultrathin periods; • Devices—work to date and prospects for exploiting MBE capabilities; • Apparatus—scaling towards production, in situ monitoring, new advances. Chairs: E. Kasper AEG Research Center Sedanstr. 10 D-7900 ULM, W. Germany E.H.C. Parker University of Warwick Dept. of Physics Coventry, CV4 7AL, United Kingdom 68
Science and Technology of Defects in Silicon
Beam Processing and Laser Chemistry
Topics in this symposium will range from the fundamental characterization of physical properties to the assessment of materials for device applications. Scheduled sessions will span: • Crystal growth—homo- and heteroepitaxial, SOI, SIMOX; • Process-induced defects—etching, gettering, heat-treatment, lithography, implantation; • Topography—imaging, mapping; • Hydrogenation of silicon—passivation processes; • Impurities—fast diffusing metals, light and exotic impurities; • Complexes and interactions between impurities—impurity pairs, thermal donors, multistability. Chairs: C.A.J. Ammerlaan Natuurkundig Laboratorium University of Amsterdam Postbus 20215 NL-1000 HE Amsterdam Netherlands
This symposium will consider both practical and theoretical aspects of energy beam materials processing. A large degree of focus will be given to the use of ion, electron and photon beams, and on lase
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