Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivale
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Jacopo Franco Ben Kaczer Guido Groeseneken
Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
Springer Series in Advanced Microelectronics Volume 47
Series Editors Kiyoo Itoh, Kokubunji-shi, Tokyo, Japan Thomas H. Lee, Stanford, CA, USA Takayasu Sakurai, Minato-ku, Tokyo, Japan Willy M. Sansen, Leuven, Belgium Doris Schmitt-Landsiedel, Munich, Germany
For further volumes: http://www.springer.com/series/4076
The Springer Series in Advanced Microelectronics provides systematic information on all the topics relevant for the design, processing, and manufacturing of microelectronic devices. The books, each prepared by leading researchers or engineers in their fields, cover the basic and advanced aspects of topics such as wafer processing, materials, device design, device technologies, circuit design, VLSI implementation, and subsystem technology. The series forms a bridge between physics and engineering and the volumes will appeal to practicing engineers as well as research scientists.
Jacopo Franco Ben Kaczer Guido Groeseneken •
Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
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Jacopo Franco Ben Kaczer Guido Groeseneken IMEC Leuven Belgium
ISSN 1437-0387 ISBN 978-94-007-7662-3 DOI 10.1007/978-94-007-7663-0
ISBN 978-94-007-7663-0
(eBook)
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